- 您现在的位置：买卖IC网 > PDF目录20546 > ISL89367FRTAZ-T (Intersil)IC MOSFET DRIVER 2CH 6A 16TDFN PDF资料下载
参数资料
| 型号： | ISL89367FRTAZ-T |
| 厂商： | Intersil |
| 文件页数： | 11/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 2CH 6A 16TDFN |
| 标准包装： | 4,000 |
| 配置： | 低端 |
| 输入类型： | 与和反相 |
| 延迟时间： | 25ns |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFDFN 裸露焊盘 |
| 供应商设备封装： | 16-TDFN |
| 包装： | 带卷 (TR) |
ISL89367
R a
R b
VREF+
INVA
IN1A
VDD
FDELA
RDELA
12
10
I D = 12A
V DS = 0V
IN2A
OUTA
SIGNAL
SOURCE
Q1
C
ISL89367
only section A is shown
VREF- VSS
8
6
V DS = 64V
V DS = 40V
4
SIGNAL
SOURCE
2
IN2A
0
0
2
4 6 8 10 12 14 16 18 20 22 24
QG, TOTAL GATE CHARGE (nC)
OUTA
FIGURE 18. FALLING OUTA TIME DELAY
Figure 18 is used to delay the falling edge of OUTx. In this case
the rising time constant is R b x C.
Logic States
The combinational control logic of the ISL89367 is very flexible.
The state of OUTx is the ANDed logic of both inputs, IN1x and
IN2x. The INVx input to the exclusive-OR gate is used to invert the
logic state of OUTx. Frequently, for SR applications, it is desirable
to have a logic control that can force OUTA = 0 for the purpose of
diode emulation. This “enable” control input can be either of the
IN1x or IN2x inputs of one channel. In Figure 1 on page 1, IN1A is
used as the enabled input for channel A. When this input is tied
to V REF+ , OUTA follows the state of IN2x. If INA1 is connected to
V REF- , with INVA = 0, OUTA remains low no matter what state
IN2A is in.
FIGURE 19. CHARGE OF A TYPICAL MOSFET
Figure 19 illustrates how the gate charge varies with gate
voltage, V GS , and the V DS of the driven MOSFET. Because an SR
is switched on and off when V DS = 0 and if we use V GS = 12V,
from the graph, Q G = 13.5nC. In this example the dissipation of
the driver with frequency = 1MHz is shown by Equation 2:
P gate = 2 × Qg × freq × V GS (EQ. 2)
= 2 × 17nC × 1MHz × 12
= 0.408W
Notice that the dissipation of the driver is not a function of the
peak drive rating of the driver. Also if an external gate resistor is
used to limit the peak current output, the dissipation is
proportionally shared between the value of the gate resistor and
the r DS(ON) of the ISL89367 output.
Another parameter that must be considered is the dissipation
resulting from the bias current at the frequency of operation. For
the ISL89367 the bias current @ V DD = 12V and 1MHz is 24mA.
Paralleling Outputs to Double the Peak Drive
Currents
The typical propagation matching of the ISL89367 is less than
1ns. Note that the propagation matching is only valid when
FDELA = RDELA = 0k ? and FDELB = RDELB = 0k ? . The matching
is so precise that carefully matched and calibrated scopes
probes and scope channels must be used to make this
measurement. Because of this excellent performance, these
driver outputs can be safely paralleled to double the current drive
capacity. It is important that the INA and INB inputs be
P bias = V DS × I bias = 12V × 24mA = 0.288W
P total = P gate + P bias + 0.408W + 0.288W = 0.696W
The Thermal impedances of the ISL89367 are:
θ JC = 3°C/W
θ JA = 36°C/W
The temperature rise is:
T riseJC = θ JC × P total = 2.09 Δ C
(EQ. 3)
(EQ. 4)
(EQ. 5)
connected together on the PCB with the shortest possible trace.
This is also required of OUTA and OUTB.
T riseJC is the temperature rise referenced to the temperature of
the PCB ground plane under the part.
Power Dissipation and Die Temp
T riseJA = θ JA × P total = 25 Δ C
(EQ. 6)
The following is an example of how to calculate the power
dissipated by the ISL89367 driver. These calculations are
intended to give an approximate temperature rise of the die
junction. Because operating conditions such as air flow can
influence the actual temperatures, it is absolutely necessary to
confirm the operating temperatures in a specific application by
measuring the ISL89367 temperatures with an infra-red
temperature sensor or camera. Using a thermal couple to
measure the temperature of small devices is not recommended
because the thermal couple wire will act as a heat sink reducing
the temperature of the measured device to values less than what
will actually occur. See Tech Brief TB379 for more information.
11
In this example the temperature rise is relatively small for θ JC
and θ JA . Obviously the ISL89367 could drive significantly larger
FETs than what is used in this example.
Output Current Rating
While the ISL89367 has a very high peak output current rating of
6A sourcing and sinking, there are limitations to the average
output current. With the high peak output current of the
ISL89367, it is tempting to use the driver as a general purpose
switch to drive loads that are not capacitive as are the gates of
MOSFETs. It is important to note that the maximum average
output current rating of the ISL89367 of 150mA must not be
FN7727.1
October 8, 2012
相关PDF资料 |
PDF描述 |
|---|---|
| 396-056-522-204 | CARD EDGE 56POS DL .125X.250 BLK |
| T95V475M016HSAL | CAP TANT 4.7UF 16V 20% 1410 |
| SBG3040CT-T-F | DIODE SCHOTTKY 30A 40V D2PAK |
| RKZ-1205S/H | CONV DC/DC 2W 12VIN 05VOUT |
| ISL6614IRZR5238 | IC DRVR DUAL SYNC BUCK 16-QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL89400ABZ | 功能描述:IC DRVR H-BRDG 100V 1.25A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89400ABZ-T | 功能描述:IC DRVR H-BRDG 100V 1.25A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89400ABZ-TK | 功能描述:IC DRVR H-BRDG 100V 1.25A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89400AR3Z | 功能描述:IC MOSFET DRVR 100V 1.25A 9-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89400AR3Z-T | 功能描述:IC MOSFET DRVR 100V 1.25A 9-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
发布紧急采购，3分钟左右您将得到回复。