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参数资料
| 型号： | ISL89367FRTAZ-T |
| 厂商： | Intersil |
| 文件页数： | 4/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 2CH 6A 16TDFN |
| 标准包装： | 4,000 |
| 配置： | 低端 |
| 输入类型： | 与和反相 |
| 延迟时间： | 25ns |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WFDFN 裸露焊盘 |
| 供应商设备封装： | 16-TDFN |
| 包装： | 带卷 (TR) |
ISL89367
Absolute Maximum Ratings
Supply Voltage, V DD Relative to V SS . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
V REF+ Relative to V DD . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to V DD + 0.3V
V REF- Relative to V SS . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.0V to V SS - 0.3V
INVx (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V SS - 0.3V to V DD + 0.3V
INnx (Note 5) Relative to V REF- . . . . . . . . . (V REF- ) - 0.3V to (V REF+ ) + 0.3V
V REF+ Relative to V SS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
V REF+ Relative to V REF- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
Average Output Current (Note 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
ESD Ratings
Human Body Model Class 2 (Tested per JESD22-A114E) . . . . . . 2000V
Machine Model Class B (Tested per JESD22-A115-A) . . . . . . . . . . 200V
Charged Device Model Class IV . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Latch-Up
(Tested per JESD-78B; Class 2, Level A)
Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
16 Ld TDFN Package (Notes 6, 7) . . . . . . . 36 3
Max Power Dissipation at +25°C in Free Air . . . . . . . . . . . . . . . . . . . . . . 2.8W
Max Power Dissipation at +25°C with Copper Plane . . . . . . . . . . . . . 33.3W
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Junction Temp Range . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Maximum Recommended Operating
Conditions
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Supply Voltage, V DD Relative to V SS . . . . . . . . . . . . . . . . . . . . . . . 0V to 16V
V REF- Relative to V SS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.0V to V SS
INVx (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V SS or V DD
INnx (Note 5) Relative to V REF- . . . . . . . . . . . . . . . . . . . . . . . . V REF- to V REF+
V REF+ Relative to V SS , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 10V
V REF+ Relative to V REF- , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V to 10V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. Substitute INVA or INVB for INVx.
5. Substitute IN1A, IN2A, IN1B, or IN2B for INnx
6. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379 for details.
7. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
8. The average output current, when driving a power MOSFET or similar capacitive load, is the average of the rectified output current (sinking and
sourcing). The peak output currents of this driver are self limiting by transconductance or r DS(ON) and do not required any external components to
minimize the peaks. If the output is driving a non-capacitive load, such as an LED, maximum output current must be limited by external means to
less than the specified absolute average output current.
DC Electrical Specifications V DD = 12V, GND = 0V, No load on OUTA or OUTB, RDELA = RDELB = FDELA = FDELB = 0k ? unless
otherwise specified. Boldface limits apply over the operating junction temperature range, -40°C to +125°C.
T J = +25°C
T J = -40°C to +125°C
MIN
MAX
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
(Note 9)
TYP
(Note 9)
(Note 9)
(Note 9)
UNITS
POWER SUPPLY
Voltage Range (V DD relative to
V SS)
V DD
-
-
-
4.5
16
V
V DD Quiescent Current
I DD
INx = GND
INA = INB = 1MHz, square wave
-
-
5
25
-
-
-
-
-
mA
mA
V REF+ AND V REF- BIAS
V REF+ Relative to V SS
V REF- Relative to V SS
V REF+ Relative to V REF-
V P-S
V N-S
V P-N
3
0
3
-
-
-
10
4
10
3
0
3
10
4
10
V
V
V
V REF+ Quiescent Current
I PP
V P-N = 12V
-
200
-
100
300
μA
UNDERVOLTAGE
VDD Undervoltage Lock-out
(Note 11)
Hysteresis
V UV
INnx = True (Note 12)
-
-
3.3
~25
-
-
-
-
-
-
V
mV
4
FN7727.1
October 8, 2012
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