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参数资料
| 型号： | IX6R11M6T/R |
| 厂商： | IXYS |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | IC DRVR HALF BRIDGE 4A 16-MLP |
| 标准包装： | 3,000 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-MLP |
| 供应商设备封装： | 16-MLP |
| 包装： | 带卷 (TR) |
IX6R11
Dynamic Electrical Characteristics *
V CL = V CH = V DD = +15V, C load = 5nF, and V DG = V LS unless otherwise specified. The dynamic electrical characteristics are
measured using Figure 7.
Symbol
Definition
Test Conditions
Min Typ Max Units
t on
Turn-on propagation delay
V HS = 0V
120 160
ns
t off
t enb
t r
t f
t dm
Turn-off propagation delay
Device not enable delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
V HS = 600V
94
110
25
17
25
125
140
35
25
50
ns
ns
ns
ns
ns
Static Electrical Characteristics
Symbol Definition
Test Conditions
Min Typ Max Units
V INH
Logic “1” input voltage, HIN, LIN, ENB V DD = V CL = 15V
9.5 V
V INL
Logic “0” input voltage, HIN, LIN, ENB V DD = V CL = 15V
0
6
V
V HLGO / / V HHGO High level output voltage,
I O = 0A
0.1
V
V CH -V HGO or V CL -V LGO
V LLGO / / V LHGO Low level output voltage,
I O = 0A
0.1
V
V HGO or V LGO
I HL
HS to LS bias current.
V HS = V CH = 600V
170
μ A
I QHS
I QLS
I QDD
I IN +
I IN -
Quiescent V CH supply current
Quiescent V CL supply current
Quiescent V DD supply current
Logic “1” input bias current
Logic “0” input voltage
V IN = 0V or V DD = 15V
V IN = 0V or V DD = 15V
V IN = 0V or V DD = 15V
V IN = V DD
V IN = 0V
1
1
15
20
3
3
30
40
1
mA
mA
μ A
μ A
μ A
V CHUV +
V CH supply undervoltage positive going threshold.
7.5 8.6
9.7
V
V CHUV -
V CLUV +
V CLUV -
V CH supply undervoltage negative going threshold.
V CL supply undervoltage positive going threshold
V CL supply undervoltage negative going threshold.
7
7.4
7
8.2
8.5
8.2
9.4
9.6
9.4
V
V
V
I GO +
HS or LS Output high short circuit current; V
GO = 15V, V IN = 15V, PW<10us
4
6
A
I GO -
HS or LS Output low short circuit current; V
GO = 0V, V IN =0V, PW<10us
-7
-5
A
* These characteristics are guaranteed by design only. Tested on a sample basis.
IXYS reserves the right to change limits, test conditions, and dimensions.
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相关代理商/技术参数 |
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| IX6R11P7 | 功能描述:功率驱动器IC 35V 6A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S3 | 功能描述:功率驱动器IC Half Bridge Chipset Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S3T/R | 功能描述:功率驱动器IC 6 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S6 | 功能描述:功率驱动器IC Half Bridge Chipset Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S6T/R | 功能描述:功率驱动器IC 6 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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