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参数资料
| 型号： | IXBF42N300 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 60 A, 3000 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, ISOPLUS, I4PAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 188K |
| 代理商： | IXBF42N300 |
2011 IXYS CORPORATION, All Rights Reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
C = 25°C to 150°C
3000
V
V
CGR
T
J = 25°C to 150°C, RGE = 1MΩ
3000
V
V
GES
Continuous
± 25
V
V
GEM
Transient
± 35
V
I
C25
T
C = 25°C
60
A
I
C110
T
C = 110°C
24
A
I
CM
T
C = 25°C, 1ms
380
A
SSOA
V
GE = 15V, TVJ = 125°C, RG = 20Ω
I
CM = 84
A
(RBSOA)
Clamped Inductive Load
V
CE ≤ 0.8 VCES
T
SC
V
GE = 15V, TJ = 125°C,
(SCSOA)
R
G = 82Ω, VCE = 1500V, Non-Repetitive
10
μs
P
C
T
C = 25°C
240
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6mm (0.062 in.) from Case for 10s
300
°C
T
SOLD
Plastic Body for 10 seconds
260
°C
F
C
Mounting Force
20..120 / 4.5..27
Nm/lb.in.
V
ISOL
50/60Hz, 1 Minute
3000
V~
Weight
5
g
DS100325(05/11)
IXBF42N300
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
CES
I
C = 1mA, VGE = 0V
3000
V
V
GE(th)
I
C = 1mA, VCE = VGE
3.0
5.0
V
I
CES
V
CE = 0.8 VCES, VGE = 0V
50
μA
Note 2, T
J = 125°C
250
μA
I
GES
V
CE = 0V, VGE = ± 25V
±200
nA
V
CE(sat)
I
C = 42A, VGE = 15V, Note 1
2.5
3.0
V
T
J = 125°C
3.1
V
V
CES
= 3000V
I
C110
= 24A
V
CE(sat) ≤
≤≤≤≤ 3.0V
High Voltage, BiMOSFETTM
Monolithic Bipolar MOS
Transistor
(Electrically Isolated Tab)
1 = Gate
5 = Collector
2 = Emitter
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
3000V~ Electrical Isolation
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
FBSOA Rated
SCSOA Rated
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
Advance Technical Information
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