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| 型号： | IXDE504SIAT/R |
| 厂商： | IXYS |
| 文件页数： | 5/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER 4A 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 19ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
IXDD504 / IXDE504
Pin Description
SYMBOL
EN A
IN A
GND
IN B
OUT B
VCC
OUT A
EN B
FUNCTION
A Channel Enable
A Channel Input
Ground
B Channel Input
B Channel Output
Supply Voltage
A Channel Output
B Channel Enable
DESCRIPTION
Channel A enable pin. When driven low, this pin disables the A channel and
forces a high impedance state to the A channel output.
A channel input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
B channel input signal-TTL or CMOS compatible.
B channel driver output. For application purposes, this pin is connected via a
resistor to the gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 30V.
A channel driver output. For application purposes, this pin is connected via a
resistor to the gate of a MOSFET/IGBT.
Channel B enable pin. When driven low, this pin disables the B channel and
forces a high impedance state to the B channel output.
CAUTION: Follow proper ESD procedures when handling and assembling this component.
Pin Configurations
8 PIN DIP (PI)
8 PIN SOIC (SIA)
8 PIN DIP (PI)
8 PIN SOIC (SIA)
1 EN A
I
EN B 8
EN A
1
I
8
EN B
X
X
2 IN A
D
OUT A 7
IN A
2
D
7
OUT A
D
E
3 GND
5
VCC 6
GND 3
5
6
VCC
4 IN B
0
4
OUT B 5
IN B
4
0
4
5
OUT B
8 LEAD DFN (D2)
(Bottom View)
8 LEAD DFN (D2)
(Bottom View)
OUT A
8
I
1 EN A
OUT A
8
I
1 EN A
X
X
GND
7
D
2 IN A
GND
7
D
2 IN A
D
E
VCC
6
5
3 IN B
VCC
6
5
3 IN B
0
0
OUT B
5
4
4 EN B
OUT B
5
4
4 EN B
NOTE: Solder tabs on bottoms of DFN packages are grounded
Figure 3 - Characteristics Test Diagram
V IN
IXYS reserves the right to change limits, test conditions, and dimensions.
5
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相关代理商/技术参数 |
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| IXDE509D1 | 功能描述:功率驱动器IC 9 Amps 35V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE509D1T/R | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE509PI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE509SIA | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDE509SIAT/R | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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