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| 型号： | IXDF604SITR |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 10/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DVR 4A DUAL HS 8SOIC |
| 标准包装： | 2,000 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 29ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 带卷 (TR) |
I NTEGRATED C IRCUITS D IVISION
IXD_604
5 Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020 , in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033 .
Device
IXD_604SI / IXD_604SIA / IXD_604PI
IXD_604D2
Moisture Sensitivity Level (MSL) Rating
MSL 1
MSL 3
5.2 ESD Sensitivity
This product is ESD Sensitive , and should be handled according to the industry standard
JESD-625 .
5.3 Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
IXD_604SI / IXD_604SIA / IXD_604D2
IXD_604PI
Maximum Temperature x Time
260°C for 30 seconds
250°C for 30 seconds
Pb
e 3
10
www.ixysic.com
R05
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| IXDH20N120 | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDH20N120AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-247AD |
| IXDH20N120D1 | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDH30N120 | 功能描述:IGBT 晶体管 30 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDH30N120AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-247AD |
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