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| 型号： | IXDR502D1B |
| 厂商： | IXYS |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC GATE LS DRVR SGL 2A 6-DFN |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 121 |
| 类型： | 低端 |
| 输入类型： | 反相 |
| 输出数： | 1 |
| 导通状态电阻： | 4 欧姆 |
| 电流 - 输出 / 通道： | 500mA |
| 电流 - 峰值输出： | 2A |
| 电源电压： | 4.5 V ~ 25 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VFDFN |
| 供应商设备封装： | 6-DFN |
| 包装： | 盒 |
Preliminary Technical Information
IXDR502 / IXDS502
2 Ampere Single Low-Side Ultrafast MOSFET Drivers
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected up to 2 Amps
? High 2A Peak Output Current
? Wide Operating Range: 4.5V to 25V
? -55°C to +125°C Extended Operating
Temperature
? High Capacitive Load Drive Capability: 1000pF
in <10ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
Applications
? Driving MOSFETs and IGBTs
? Motor Controls
General Description
The IXDR502, and IXDS502 each consist of a single 2A
CMOS high speed gate driver for driving the latest IXYS
MOSFETs & IGBTs. Each type can source and sink 2
Amps of peak current while producing voltage rise and
fall times of less than 15ns. The input of each driver is
TTL or CMOS compatible and is virtually immune to
latch up. Patented* design innovations eliminate cross
conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by
very quick & matched rise and fall times.
The IXDR502 is configured as a single inverting gate
driver, and the IXDS502 is configured as a single non-
inverting gate driver.
The IXDR502, and IXDS502 are available in the 6-Lead
DFN (D1) package, which occupies less than 20% of
the board area of a typical 8-Pin SOIC package.
?
?
?
?
?
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
?
?
?
Pulse Transformer Driver
Class D Switching Amplifiers
Power Charge Pumps
*United States Patent 6,917,227
Ordering Information
Part Number
IXDR502D1B
IXDR502D1BT/R
IXDS502D1B
IXDS502D1BT/R
Description
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
2A Low Side Gate Driver I.C.
Package
Type
6-Lead DFN
6-Lead DFN
6-Lead DFN
6-Lead DFN
Packing Style
2” x 2” Waffle Pack
7” Tape and Reel
2” x 2” Waffle Pack
7” Tape and Reel
Pack
Qty
121
2500
121
2500
Configuration
Single Inverting
Driver
Single Non-
Inverting Driver
NOTE: All parts are lead-free and RoHS Compliant
Copyright ? 2007 IXYS CORPORATION All rights reserved
First Release
DS99909(10/07)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDS430 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:30 Amp Low-Side Ultrafast MOSFET / IGBT Driver |
| IXDS430SI | 功能描述:功率驱动器IC 30 Amps SelectableV 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDS502D1B | 功能描述:功率驱动器IC 2 Amps V 4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDT30N120 | 功能描述:IGBT 晶体管 60 Amps 1200V 2.4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDT30N120AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 50A I(C) | TO-268AA |
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