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| 型号： | IXFB170N30P |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH TO-264 |
| 标准包装： | 25 |
| 系列： | Polar™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 300V |
| 电流 - 连续漏极(Id) @ 25° C： | 170A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 18 毫欧 @ 85A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 258nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 20000pF @ 25V |
| 功率 - 最大： | 1250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | PLUS264? |
| 包装： | 管件 |
IXFB170N30P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
PLUS264 TM (IXFB) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D =0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
57
95
20
2450
27
41
29
79
16
258
82
78
0.13
0.10
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
° C/ W
° C /W
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 85A, V GS = 0V, Note 1
170
500
1.3
A
A
V
t rr
Q RM
I RM
I F = 85A, -di/dt = 150A/ μ s
V R = 100V
1.85
21
200
ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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| IXFB210N20P | 功能描述:MOSFET 210 Amps 200V 0.0105 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFB210N30P3 | 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFB300N10P | 功能描述:MOSFET POLAR PWR MOSFET 100V, 300A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFB30N120P | 功能描述:MOSFET 30 Amps 1200V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFB30N120Q2 | 功能描述:MOSFET 30 Amps 1200V 0.38 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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