- 您现在的位置：买卖IC网 > Datasheet目录453 > IXFK100N10 (IXYS)MOSFET N-CH 100V 100A TO-264AA Datasheet资料下载
参数资料
| 型号： | IXFK100N10 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 100A TO-264AA |
| 标准包装： | 25 |
| 系列： | HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 100A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 75A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 8mA |
| 闸电荷(Qg) @ Vgs： | 360nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9000pF @ 25V |
| 功率 - 最大： | 500W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264AA |
| 包装： | 管件 |
HiPerFET TM
V DSS
I D25
R DS(on)
Power MOSFETs
N-Channel Enhancement Mode
IXFK100N10
IXFN150N10
100 V 100 A
100 V 150 A
t rr ￡ 200 ns
12 m W
12 m W
Avalanche Rated, High dv/dt, Low t rr
TO-264 AA (IXFK)
Symbol
Test Conditions
Maximum Ratings
IXFK IXFN
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
100
100
100
100
V
V
G
D
S
(TAB)
V GS
V GSM
I D25
I D120
Continuous
Transient
T C = 25 ° C
T C = 120 ° C, limited by external leads
± 20
± 30
100 ?
76
± 20
± 30
150
-
V
V
A
A
miniBLOC, SOT-227 B (IXFN)
E153432
S
D G
I DM
I AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
560
75
560
75
A
A
G
S
E AR
T C = 25 ° C
30
30
mJ
S
S
D
dv/dt
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
5
5
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
P D
T C = 25 ° C
500
520
W
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
International standard packages
JEDEC TO-264 AA, epoxy meet
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
Features
q
q
T L
1.6 mm (0.063 in) from case for 10 s
300
-
° C
q
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
V ISOL
50/60 Hz, RMS
I ISOL ￡ 1 mA
t = 1 min
t=1s
-
-
2500
3000
V~
V~
q
isolation
Low R DS (on) HDMOS TM process
M d
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
q
q
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Weight
10
30
g
q
Low package inductance
q
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
q
q
q
V DSS
V GH(th)
V GS = 0 V, I D = 1 mA
V DS = V GS , I D = 8 mA
100
2
4
V
V
q
q
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
I GSS
I DSS
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
± 200
400
2
nA
m A
mA
q
q
Advantages
R DS(on)
V GS = 10 V, I D = 75 A
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
12
m W
q
q
q
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
92803G(8/96)
1-4
相关PDF资料 |
PDF描述 |
|---|---|
| IXFK100N25 | MOSFET N-CH 250V 100A TO-264AA |
| IXFK102N30P | MOSFET N-CH 300V 102A TO-264 |
| IXFK110N07 | MOSFET N-CH 70V 110A TO-264AA |
| IXFK120N20P | MOSFET N-CH 200V 120A TO-264 |
| IXFK120N20 | MOSFET N-CH 200V 120A TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFK100N-10 | 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA 制造商:Ixys Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA |
| IXFK100N25 | 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK102N30P | 功能描述:MOSFET 102 Amps 300V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK105N07 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFK110N06 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
发布紧急采购，3分钟左右您将得到回复。