- 您现在的位置：买卖IC网 > Datasheet目录454 > IXFK32N90P (IXYS)MOSFET N-CH 900V 32A TO-264 Datasheet资料下载
参数资料
| 型号： | IXFK32N90P |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 900V 32A TO-264 |
| 标准包装： | 25 |
| 系列： | * |
Advance Technical Information
Polar TM HiPerFET TM
Power MOSFETs
IXFK32N90P
IXFX32N90P
V DSS
I D25
R DS(on)
= 900V
= 32A
< 300m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-264 (IXFK)
Symbol
V DSS
V DGR
V GSS
V GSM
I D25
I DM
I A
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
Maximum Ratings
900
900
± 30
± 40
32
80
16
V
V
V
V
A
A
A
G
D
S
PLUS247 (IXFX)
Tab
E AS
dv/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
2
15
J
V/ns
G
D
S
Tab
P D
T J
T C = 25 ° C
960
-55 to +150
W
° C
G = Gate
S = Source
D = Drain
Tab = Drain
T JM
150
° C
T stg
T L
T SOLD
M d
F C
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
-55 to +150
300
260
1.13/10
20..120 /4.5..27
10
6
° C
° C
° C
Nm/lb.in.
N/lb.
g
g
Features
Low R DS(on) and Q G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Easy to Mount
Space Savings
BV DSS
V GS = 0V, I D = 3mA
900
V
V GS(th)
V DS = V GS , I D = 1mA
3.5
6.5
V
Applications
I GSS
I DSS
R DS(on)
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Note 1
± 200 nA
25 μ A
2 mA
300 m Ω
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS100387(9/11)
相关PDF资料 |
PDF描述 |
|---|---|
| IXFK34N80 | MOSFET N-CH 800V 34A TO-264AA |
| IXFK360N15T2 | MOSFET N-CH 150V 360A TO264 |
| IXFK36N60P | MOSFET N-CH 600V 36A TO-264 |
| IXFK36N60 | MOSFET N-CH 600V 36A TO-264AA |
| IXFK40N90P | MOSFET N-CH TO-264 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXFK33N50 | 功能描述:MOSFET 33 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK33N50S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 33A I(D) | TO-264VAR |
| IXFK34N80 | 功能描述:MOSFET 800V 34A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK35N50 | 功能描述:MOSFET 35 Amps 500V 0.15 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXFK35N50S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 35A I(D) | TO-264VAR |
发布紧急采购，3分钟左右您将得到回复。