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参数资料
型号： IXFK32N90P
厂商： IXYS
文件页数： 2/5页
文件大小： 0K
描述： MOSFET N-CH 900V 32A TO-264
标准包装： 25
系列： *
IXFK32N90P
IXFX32N90P
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 Outline
g fs
C iss
C oss
C rss
R Gi
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate Input Resistance
13
22
10.6
750
140
1.1
S
nF
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
48
80
68
26
215
80
98
0.15
ns
ns
ns
ns
nC
nC
nC
0.13 ° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
J
K
L
L1
P
Q
0.00 0.25
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
Source-Drain Diode
Q1
R
8.38 8.69
3.81 4.32
.330 .342
.150 .170
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
R1
S
T
1.78 2.29
6.04 6.30
1.57 1.83
.070 .090
.238 .248
.062 .072
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
32
128
1.5
A
A
V
PLUS247 TM Outline
t rr
Q RM
I RM
I F = 16A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.9
14
300 ns
μ C
A
Terminals: 1 - Gate
Note:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2 - Drain
3 - Source
Dim.
A
A 1
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
Inches
Min. Max.
.190 .205
.090 .100
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
A 2
b
b 1
b 2
C
D
E
e
L
L1
Q
R
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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