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参数资料
| 型号： | IXFN140N25T |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 120A SOT-227 |
| 标准包装： | 10 |
| 系列： | * |
Advance Technical Information
GigaMOS TM HiperFET TM
Power MOSFET
IXFN140N25T
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
250V
120A
17m Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC
E153432
S
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
250
V
G
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
250
± 20
± 30
V
V
V
D
S
I D25
I DM
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
120
400
A
A
G = Gate
S = Source
D = Drain
I A
E AS
P D
dv/dt
T J
T JM
T stg
V ISOL
T L
T SOLD
M d
Weight
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
50/60 Hz, RMS t = 1 minute
I ISOL ≤ 1mA t = 1 second
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
Terminal Connection Torque
40
3
690
20
-55 ... +150
150
-55 ... +150
2500
3000
300
260
1.5/13
1.3/11.5
30
A
J
W
V/ns
° C
° C
° C
V~
V~
° C
° C
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
High Current Handling
Capability
Fast Intrinsic Diode
Low R DS(ON)
Avalanche Rated
Advantages
Easy to Mount
Space Savings
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
High Power Density
Applications
BV DSS
V GS = 0V, I D = 3mA
250
V
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4mA
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
V GS = 10V, I D = 60A, Note 1
T J = 125 ° C
2.5
5.0 V
± 200 nA
50 μ A
3 mA
17 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
? 2010 IXYS CORPORATION, All Rights Reserved
DS100268(05/10)
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