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| 型号： | IXFP3N50PM |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 2.7A TO-220 |
| 标准包装： | 50 |
| 系列： | PolarHV™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 1.8A，10V |
| Id 时的 Vgs(th)（最大）： | 5.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 409pF @ 25V |
| 功率 - 最大： | 36W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXFP 3N50PM
Symbol
Test Conditions
Characteristic Values
ISOLATED TO-220 (IXTP...M)
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
V DS = 10 V; I D = 1.8 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
3.5
409
48
S
pF
pF
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 3.6 A
R G = 50 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 1.8
6.1
25
28
63
29
9.3
3.3
pF
ns
ns
ns
ns
nC
nC
1 2
3
Q gd
R thJC
3.4
3.5
nC
° C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V, Note 1
3.6
5
1.5
A
A
V
t rr
Q RM
I RM
Notes:
I F = 3.6 A, -di/dt = 100 A/ μ s,
V R = 100 V, V GS = 0 V
1) Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.1
0.5
200 ns
μ C
A
2) Test current I T = 2.5 A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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