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参数资料
| 型号： | IXTF200N10T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 90A I4-PAC-5 |
| 产品目录绘图： | ISOPLUS i4, i5 Package |
| 标准包装： | 25 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 90A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 152nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 9400pF @ 25V |
| 功率 - 最大： | 156W |
| 安装类型： | 通孔 |
| 封装/外壳： | i4-Pac?-5 |
| 供应商设备封装： | ISOPLUS i4-PAC? |
| 包装： | 管件 |
IXTF200N10T
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
g fs V DS = 10V, I D = 60A , Note 1
C iss
Characteristic Values
Min. Typ. Max.
60 96
9400
S
pF
ISOPLUS i4-Pak TM (5-Lead)
(IXTF) Outline
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 50A
1087
140
35
31
45
34
152
47
47
0.21
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.96 ° C/W
° C/W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 50A, V GS = 0V, Note 1
200
500
1.0
A
A
V
t rr
Q RM
I RM
I F = 100A, V GS = 0V,-di/dt = 100A/ μ s
V R = 50V
76
205
5.4
ns
nC
A
Leads:
1. Gate;
2, 3. Source;
4, 5. Drain
6. Isolated.
Notes: 1. Pulse Test, t ≤ 300 μ s; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
All leads and tab are tin plated.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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| IXTH 3N100P | 制造商:IXYS Corporation 功能描述: |
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