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参数资料
型号： IXTH360N055T2
厂商： IXYS
文件页数： 2/6页
文件大小： 0K
描述： MOSFET N-CH 55V 360A TO-247
标准包装： 30
系列： TrenchT2™
FET 型： MOSFET N 通道，金属氧化物
FET 特点： 标准
漏极至源极电压(Vdss)： 55V
电流 - 连续漏极(Id) @ 25° C： 360A
开态Rds（最大）@ Id, Vgs @ 25° C： 2.4 毫欧 @ 100A，10V
Id 时的 Vgs(th)（最大）： 4V @ 250µA
闸电荷(Qg) @ Vgs： 330nC @ 10V
输入电容 (Ciss) @ Vds： 20000pF @ 25V
功率 - 最大： 935W
安装类型： 通孔
封装/外壳： TO-247-3
供应商设备封装： TO-247
包装： 管件
IXTH360N055T2
IXTT360N055T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
65
110
20
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
2650
pF
1
2
3
?P
C rss
480
pF
R Gi
t d(on)
Gate Input Resistance
Resistive Switching Times
1.6
30
Ω
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 100A
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
23
62
56
330
76
87
0.21
ns
ns
ns
nC
nC
nC
0.16 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
.610 .640
Source-Drain Diode
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 150A, V GS = 0V
-di/dt = 100A/ μ s
V R = 27V
78
4.2
164
360
1440
1.3
A
A
V
ns
A
nC
R 4.32 5.49
S 6.15 BSC
TO-268 Outline
.170 .216
242 BSC
Note 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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