参数资料
型号: IXTH76N25T
厂商: IXYS
文件页数: 2/6页
文件大小: 0K
描述: MOSFET N-CH 250V 76A TO-247
标准包装: 30
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 76A
开态Rds(最大)@ Id, Vgs @ 25° C: 39 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大): 5V @ 1mA
闸电荷(Qg) @ Vgs: 92nC @ 10V
输入电容 (Ciss) @ Vds: 4500pF @ 25V
功率 - 最大: 460W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T IXTQ76N25T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 15V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 3.3 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
43
72
4500
480
46
22
25
56
29
92
28
21
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.27 ° C /W
R thCH
TO-220
TO-3P, TO-247
0.50
0.21
° C W
° C W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 38A, -di/dt = 250A/ μ s
V R = 100V, V GS = 0V
148
21
1.6
76
200
1.5
A
A
V
ns
A
μ C
Notes: 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
* : Current may be limited by external lead limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
相关PDF资料
PDF描述
IXTH88N15 MOSFET N-CH 150V 88A TO-247AD
IXTH8P50 MOSFET P-CH 500V 8A TO-247
IXTH90N15T MOSFET N-CH 150V 90A TO247
IXTI12N50P MOSFET N-CH 500V 12A I2-PAK
IXTJ36N20 MOSFET N-CH 200V 36A TO-247AD
相关代理商/技术参数
参数描述
IXTH76P10T 功能描述:MOSFET -76 Amps -100V 0.024 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH7P45 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 7A I(D) | TO-218VAR
IXTH7P50 功能描述:MOSFET -7 Amps 500V 1.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH80N20L 功能描述:MOSFET Standard Linear Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH86N20T 功能描述:MOSFET 86 Amps 200V 29 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube