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参数资料
| 型号： | IXTL2X240N055T |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 140A ISOPLUS I5 |
| 产品目录绘图： | ISOPLUS i4, i5 Package |
| 标准包装： | 25 |
| 系列： | TrenchMV™ |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 140A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.4 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7600pF @ 25V |
| 功率 - 最大： | 150W |
| 安装类型： | 通孔 |
| 封装/外壳： | ISOPLUSi5-Pak? |
| 供应商设备封装： | ISOPLUSi5-Pak? |
| 包装： | 管件 |
IXTL2x240N055T
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
ISOPLUS i5-Pak TM (IXTL) Outline
Min. Typ. Max.
g fs
R G
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 25A
R G = 5 Ω (External)
80
132
3
7600
1240
260
40
54
63
75
170
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 25A
32
nC
Leads:
Q gd
R thJC
R thCS
48
0.25
1.0
nC
° C/W
° C/W
1, 5: Drain
2, 4: Source
3: Gate
6. Isolated
Source-Drain Diode
Characteristic Values
T J = 25 ° C unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 50 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
40
240
650
1.0
A
A
V
ns
V R = 30 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. Drain and source Kelvin contact must be located less than 5 mm from
the plastic body.
ADVANCETECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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