参数资料
型号: IXTP14N60PM
厂商: IXYS
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 600V 7A TO-220
标准包装: 50
系列: PolarHV™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 7A
开态Rds(最大)@ Id, Vgs @ 25° C: 550 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 5.5V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 2500pF @ 25V
功率 - 最大: 75W
安装类型: 通孔
封装/外壳: TO-220-3 全封装,隔离接片
供应商设备封装: TO-220
包装: 管件
IXTP14N60PM
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
ISOLATED TO-220 (I XTP...M )
g fs
C iss
C oss
V DS = 20V, I D = 7A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
7
13
2500
215
S
pF
pF
C rss
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 V DSS , I D = 7A
R G = 10 Ω (External)
13
23
27
70
26
pF
ns
ns
ns
ns
1
2
3
Q g(on)
36
nC
Q gs
Q gd
R thJC
V GS = 10V, V DS = 0.5
V DSS , I D = 7A
16
12
nC
nC
1.66 ° C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
I F = 14A, -di/dt = 100A/ μ s,
V R = 100V, V GS = 0V
500
14
42
1.5
A
A
V
ns
Notes:1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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