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| 型号： | IXTP50N085T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 50A TO-220 |
| 产品目录绘图： | TO-220, TO-251 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 34nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 25V |
| 功率 - 最大： | 130W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTP50N085T
IXTY50N085T
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A
R G = 18 Ω (External)
18
29
1460
220
52
18
32
38
S
pF
pF
pF
ns
ns
ns
t f
Q g(on)
Q gs
V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A
33
34
10
ns
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q gd
R thJC
10
nC
1.15 ° C/W
R thCS
TO-220
0.5
° C/W
Source-Drain Diode
Symbol Test Conditions
Characteristic
Values
T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
I S
V GS = 0 V
50
A
I SM
Repetitive
130
A
Notes:
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
55
1.2
V
ns
1. Pulse test: t ≤ 300 μ s, duty cycle
d ≤ 2 %;
2. On through-hole packages, R DS(on)
V R = 40 V, V GS = 0 V
TO-252 (IXTY) Outline
Kelvin test contact location must be
5 mm or less from the package body.
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
b
b1
2.19 2.38
0.89 1.14
0 0.13
0.64 0.89
0.76 1.14
0.086
0.035
0
0.025
0.030
0.094
0.045
0.005
0.035
0.045
PRELIMINARYTECHNICAL
INFORMATION
1 Anode
2 NC
3 Anode
4 Cathode
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.090
0.180
0.370
0.020
0.025
0.035
0.100
0.215
0.023
0.023
0.245
0.205
0.265
0.205
BSC
BSC
0.410
0.040
0.040
0.050
0.115
The product presented herein is under
development. The Technical Specifica-
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
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