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参数资料
| 型号： | IXTP88N085T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 88A TO-220 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 88A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 69nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3140pF @ 25V |
| 功率 - 最大： | 230W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTA88N085T
IXTP88N085T
Symbol
Test Conditions
Characteristic Values
TO-263AA (IXTA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 0.5 I D25 , Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
40
63
3140
484
105
20
54
S
pF
pF
pF
ns
ns
t d(off)
t f
R G = 5 ? (External)
42
29
ns
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
69
18
15
nC
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCS
TO-220
0.50
0.65 ° C/W
° C/W
b
b2
c
c2
D
0.51
1.14
0.46
1.14
8.64
0.99
1.40
0.74
1.40
9.65
.020
.045
.018
.045
.340
.039
.055
.029
.055
.380
D1
E
7.11
9.65
8.13
10.29
.280
.380
.320
.405
Source-Drain Diode
E1
e
6.86
2.54
8.13
BSC
.270
.100
.320
BSC
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
L
L1
L2
14.61
2.29
1.02
15.88
2.79
1.40
.575
.090
.040
.625
.110
.055
I S
V GS = 0 V
88
A
L3
L4
R
1.27
0
0.46
1.78
0.38
0.74
.050
0
.018
.070
.015
.029
I SM
Pulse width limited by T JM
240
A
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
90
1.0
V
ns
TO-220AB (IXTP) Outline
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact location must be
5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
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