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| 型号： | IXTT75N10L2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 75A TO268 |
| 标准包装： | 30 |
| 系列： | Linear L2™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 21 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 215nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 8100pF @ 25V |
| 功率 - 最大： | 400W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-268-3，D³Pak（2 引线+接片），TO-268AA |
| 供应商设备封装： | TO-268 |
| 包装： | 管件 |
IXTH75N10L2
IXTT75N10L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXTH) Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
35
44
53
S
C iss
8100
pF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
1280
pF
1
2
3
?P
C rss
350
pF
R Gi
Integrated Gate Input Resistor
3.0
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 0 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
23
14
68
15
215
36
80
0.21
ns
ns
ns
ns
nC
nC
nC
0.31 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
Safe Operating Area Specification
Characteristic Values
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
.016 .031
.819 .845
.610 .640
0.205 0.225
Symbol
SOA
Test Conditions
V DS = 80V, I D = 3A, T C = 75°C, T p = 5s
Min. Typ. Max.
240
W
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.780 .800
.177
.140 .144
0.232 0.252
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-268 (IXTT) Outline
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
75
300
1.4
A
A
V
t rr
I RM
Q RM
I F = 37.5A, -di/dt = 100A/ μ s,
V R = 50V, V GS = 0V
180
16.2
1.46
ns
A
μ C
Terminals: 1 - Gate
2 - Drain
Note 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
3 - Source
Tab - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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