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| 型号： | IXTY12N06T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 12A TO-252 |
| 产品目录绘图： | TO-252(AA), DPAK-2 Package |
| 标准包装： | 70 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 12A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 25µA |
| 闸电荷(Qg) @ Vgs： | 3.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 256pF @ 25V |
| 功率 - 最大： | 33W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 管件 |
IXTU12N06T
IXTY12N06T
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-251 (IXTU) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V DS = 10V, I D = 0.5 ? I D25 , Notes 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 6A
R G = 50 Ω (External)
2.9
4.7
256
46
10.4
12
29
29
18
3.4
S
pF
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 6A
1.0
0.9
nC
nC
1. Gate
3. Source
2.Drain
4. Drain
R thJC
4.5 ° C/W
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
b
2.19
0.89
0.64
2.38
1.14
0.89
.086
0.35
.025
.094
.045
.035
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
b1
b2
c
c1
D
0.76
5.21
0.46
0.46
5.97
1.14
5.46
0.58
0.58
6.22
.030
.205
.018
.018
.235
.045
.215
.023
.023
.245
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
12
48
A
A
E
e
e1
H
6.35
2.28
4.57
17.02
6.73
BSC
BSC
17.78
.250
.090
.180
.670
.265
BSC
BSC
.700
V SD
t rr
I RM
I F = 6A, V GS = 0V, Note 1
I F = 6A, V GS = 0V, -di/dt = 100A/ μ s
V R = 30V
30
1.34
1.2
V
ns
A
L 8.89 9.65
L1 1.91 2.28
L2 0.89 1.27
TO-252 (IXTY) Outline
.350
.075
.035
.380
.090
.050
Notes: 1. Pulse test: t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins:
Dim.
1 - Gate
3 - Source
Millimeter
2,4 - Drain
Inches
Min. Max.
Min.
Max.
A
A1
A2
b
b1
2.19
0.89
0
0.64
0.76
2.38
1.14
0.13
0.89
1.14
0.086
0.035
0
0.025
0.030
0.094
0.045
0.005
0.035
0.045
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
b2
c
c1
D
D1
E
E1
5.21
0.46
0.46
5.97
4.32
6.35
4.32
5.46
0.58
0.58
6.22
5.21
6.73
5.21
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.215
0.023
0.023
0.245
0.205
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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