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参数资料
| 型号： | K7A163280A-QI16 |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 CACHE SRAM, 3.5 ns, PQFP100 |
| 封装： | 14 X 20 MM, TQFP-100 |
| 文件页数： | 17/18页 |
| 文件大小： | 473K |
| 代理商： | K7A163280A-QI16 |
512Kx36/x32 & 1Mx18 Synchronous SRAM
- 8 -
Rev 0.2
Dec 2001
K7A161880A
K7A163280A
Preliminary
K7A163680A
CAPACITANCE*(TA=25
°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
5
pF
Output Capacitance
COUT
VOUT=0V
-
7
pF
OPERATING CONDITIONS (0
°C ≤ TA ≤ 70°C)
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
1.7
1.8
1.95
V
VDDQ
1.7
1.8
1.95
V
Ground
VSS
0
V
ABSOLUTE MAXIMUM RATINGS*
*Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 2.5
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
-0.3 to 2.5
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to VDD+0.3
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.3
V
Power Dissipation
PD
1.6
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
Commercial
TOPR
0 to 70
°C
Industrial
TOPR
-40 to 85
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
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