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参数资料
| 型号： | K7A163280A-QI16 |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 CACHE SRAM, 3.5 ns, PQFP100 |
| 封装： | 14 X 20 MM, TQFP-100 |
| 文件页数： | 18/18页 |
| 文件大小： | 473K |
| 代理商： | K7A163280A-QI16 |
512Kx36/x32 & 1Mx18 Synchronous SRAM
- 9 -
Rev 0.2
Dec 2001
K7A161880A
K7A163280A
Preliminary
K7A163680A
DC ELECTRICAL CHARACTERISTICS(VDD=1.8V+0.15V/-0.10V, TA=0
°C to +70°C)
Notes : 1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. VIH=VDDQ+0.3V.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
IIL
VDD = Max ; VIN=VSS to VDD
-2
+2
A
Output Leakage Current
IOL
Output Disabled, VOUT=VSS to VDDQ
-2
+2
A
Operating Current
ICC
Device Selected, IOUT=0mA,
ZZ
≤VIL , Cycle Time ≥ tCYC
Min
-25
-
440
mA
1,2
-22
-
400
-20
-
370
-16
-
340
-14
-
280
Standby Current
ISB
Device deselected,
IOUT=0mA, ZZ
≤VIL, f=Max,
All Inputs
≤0.2V or ≥ VDD-0.2V
-25
-
120
mA
-22
-
110
-20
-
100
-16
-
90
-14
-
90
ISB1
Device deselected, IOUT=0mA, ZZ
≤0.2V,
f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)
-
70
mA
ISB2
Device deselected, IOUT=0mA, ZZ
≥VDD-
0.2V, f=Max, All Inputs
≤VIL or ≥VIH
-
60
mA
Output Low Voltage(1.8V I/O)
VOL
IOL=1.0mA
-
0.4
V
Output High Voltage(1.8V I/O)
VOH
IOH= -1.0mA
1.4
-
V
Input Low Voltage(1.8V I/O)
VIL
-0.3
0.35*VDDQ
V
nput High Voltage(1.8V I/O)
VIH
0.65*VDDQ
VDD+0.3
V
3
VSS
VIH
VSS-0.6V
20% tCYC(MIN)
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
PARAMETER
VALUE
Input Pulse Level
0 to 1.8V
Input and Output Timing Reference Levels
VDDQ/2
Output Load
See Fig. 1
(VDD=1.8V+0.15V/-0.10V,VDDQ=1.8V+0.15V/-0.10V, TA=0to70
°C)
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相关代理商/技术参数 |
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| K7A163600A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 Synchronous SRAM |
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