参数资料
型号: K8S1215EZC-SC1C0
元件分类: PROM
英文描述: 32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
封装: 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
文件页数: 24/83页
文件大小: 1511K
代理商: K8S1215EZC-SC1C0
- 30 -
K8S1215E(T/B/Z)C
datasheet NOR FLASH MEMORY
Rev. 1.1
18.0 AC TEST CONDITION
19.0 AC CHARACTERISTICS
19.1 Synchronous/Burst Read
Parameter
Value
Input Pulse Levels
0V to VCC
Input Rise and Fall Times
3ns(max)@66Mhz, 2.5ns(max)@83Mhz, 1.5ns(max)@108Mhz, 1ns(max)@133Mhz
Input and Output Timing Levels
VCC/2
Output Load
CL = 30pF
Address to Address Skew
3ns(max)
Parameter
Symbol
1C
(66 MHz)
1D
(83 MHz)
1E
(108 MHz)
1F
(133 MHz)
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Initial Access Time
tIAA
-
95
-
95
-
95
-
95
ns
Burst Access Time Valid Clock to Output Delay
tBA
-
11
-
9-
7-
6
ns
AVD Setup Time to CLK
tAVDS
5
-
4
-
3.5
-
2.5
-
ns
AVD Hold Time from CLK
tAVDH
2
-
2
-
2-
ns
AVD High to OE Low
tAVDO
0
-
0
-
0-
ns
Address Setup Time to CLK
tACS
5
-
4
-
3.5
-
2.5
-
ns
Address Hold Time from CLK
tACH
6
-
5
-
2-
ns
Data Hold Time from Next Clock Cycle
tBDH
3
-
3
-
2-
ns
Output Enable to RDY valid
tOER
-
11
-
9-
7-
6
ns
CE Disable to High Z
tCEZ
-
9
-
9
-9
ns
OE Disable to High Z
tOEZ
-
9
-
9
-9
ns
CE Setup Time to CLK
tCES
6
-
4.5
-
4
-
3.5
-
ns
CE Enable to RDY active
tRDY
-
11
-
9-
7-
6
ns
CLK to RDY Setup Time
tRDYA
-
11
-
9-
7-
6
ns
RDY Setup Time to CLK
tRDYS
3
-
3
-
2-
ns
CLK period
tCLK
15.1
-
12.05
-
9.26
-
7.52
-
ns
CLK High or Low Time
tCLKH/L
0.4x
tCLK
0.6x
tCLK
0.4x
tCLK
0.6x
tCLK
0.4x
tCLK
0.6x
tCLK
0.4x
tCLK
0.6x
tCLK
ns
CLK Fall or Rise Time
tCLKHCL
-
3
-
2.5
-
1.5
-
1
ns
0V
VCC
VCC/2
Input & Output
Test Point
Output Load
Device
Under
Test
* CL = 30pF including scope
and Jig capacitance
Input Pulse and Test Point (including CLK characterization)
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