参数资料
型号: K8S1215EZC-SC1C0
元件分类: PROM
英文描述: 32M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
封装: 9 X 11 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-64
文件页数: 26/83页
文件大小: 1511K
代理商: K8S1215EZC-SC1C0
Figure 8. 8 word Linear Burst with RDY Set One Cycle Before Data (Wrap Around Mode, CR setting : A18=1)
Figure 7. 8 word Linear Burst Mode with Wrap Around (133 MHz)
- 32 -
K8S1215E(T/B/Z)C
datasheet NOR FLASH MEMORY
Rev. 1.1
SWITCHING WAVEFORMS
NOTE : In order to avoid a bus conflict the OE signal is enabled on the next rising edge after AVD is going high.
tCES
tAVDS
tAVDH
tACS
tACH
tIAA
tBA
tBDH
Hi-Z
Aa
tRDYS
7.5ns typ(133MHz).
CE
CLK
AVD
OE
A/DQ0:
A/DQ15
RDY
A16-A24
13 cycles for initial access shown.
CR setting : A14=1, A13=0, A12=0, A11=1
D7
D0
D1
D2
D3
D4
D5
D6
D7
D0
Aa
1
2
3
4
11
12
13
tOER
tRDYA
tAVDO
tRDY
tAVDS
tCES
tAVDS
tAVDH
tACS
tACH
tIAA
tBA
tBDH
Hi-Z
Aa
tRDYS
7.5ns typ(133MHz).
CE
CLK
AVD
OE
A/DQ0:
A/DQ15
RDY
A16-A24
13 cycles for initial access shown.
CR setting : A14=1, A13=0, A12=0, A11=1
D7
D0
D1
D2
D3
D4
D5
D6
D7
D0
1
2
3
4
11
12
Aa
tOER
10
13
tRDYA
tAVDO
tRDY
tAVDS
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