参数资料
型号: KMC8144VT800B
厂商: Freescale Semiconductor
文件页数: 40/80页
文件大小: 0K
描述: IC DSP 783FCPBGA
标准包装: 2
系列: StarCore
类型: SC3400 内核
接口: EBI/EMI,以太网,I²C,PCI,Serial RapidIO,SPI,TDM,UART,UTOPIA
时钟速率: 800MHz
非易失内存: ROM(96 kB)
芯片上RAM: 10.5MB
电压 - 输入/输出: 3.30V
电压 - 核心: 1.00V
工作温度: 0°C ~ 90°C
安装类型: 表面贴装
封装/外壳: 783-BBGA,FCBGA
供应商设备封装: 783-FCPBGA(29x29)
包装: 托盘
Electrical Characteristics
2.6.4.2
DDR SDRAM Output AC Timing Specifications
Table 23 provides the output AC timing specifications for the DDR SDRAM interface.
Table 23. DDR SDRAM Output AC Timing Specifications
Parameter
Symbol 1
Min
Max
Unit
MCK[n] cycle time, (MCK[n]/MCK[n]
crossing) 2
t MCK
5
10
ns
ADDR/CMD output setup with respect to MCK 3
t DDKHAS
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
ADDR/CMD output hold with respect to MCK 3
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
MCSn output setup with respect to MCK 3
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
MCSn output hold with respect to MCK 3
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
t DDKHAX
t DDKHCS
t DDKHCX
1.95
2.40
3.15
4.20
1.85
2.40
3.15
4.20
1.95
2.40
3.15
4.20
1.95
2.40
3.15
4.20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MCK to MDQS Skew 4
t DDKHMH
–0.6
0.6
ns
MDQ/MECC/MDM output setup with respect to MDQS 5
t DDKHDS,
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
t DDKLDS
700
900
1100
1200
ps
ps
ps
ps
MDQ/MECC/MDM output hold with respect to MDQS 5
t DDKHDX,
? 400 MHz
? 333 MHz
? 266 MHz
? 200 MHz
MDQS preamble start 6
MDQS epilogue end 6
t DDKLDX
t DDKHMP
t DDKHME
700
900
1100
1200
–0.5 × t MCK – 0.6
–0.6
–0.5 × t MCK +0.6
0.6
ps
ps
ps
ps
ns
ns
Notes:
40
1.
2.
3.
4.
5.
6.
7.
The symbols used for timing specifications follow the pattern of t (first two letters of functional block)(signal)(state) (reference)(state) for
inputs and t (first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
(DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
t DDKHAS symbolizes DDR timing (DD) for the time t MCK memory clock reference (K) goes from the high (H) state until outputs
(A) are setup (S) or output valid time. Also, t DDKLDX symbolizes DDR timing (DD) for the time t MCK memory clock reference
(K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
All MCK/MCK referenced measurements are made from the crossing of the two signals ± 0.1 V.
ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ/MECC/MDM/MDQS. For the
ADDR/CMD setup and hold specifications, it is assumed that the Clock Control register is set to adjust the memory clocks by
1/2 applied cycle.
Note that t DDKHMH follows the symbol conventions described in note 1. For example, t DDKHMH describes the DDR timing (DD)
from the rising edge of the MCK(n) clock (KH) until the MDQS signal is valid (MH). t DDKHMH can be modified through control
of the DQSS override bits in the TIMING_CFG_2 register. This will typically be set to the same delay as the clock adjust in the
CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the same
adjustment value. See the MSC8144 Reference Manual for a description and understanding of the timing modifications
enabled by use of these bits.
Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
(MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
All outputs are referenced to the rising edge of MCK(n) at the pins of the microprocessor. Note that t DDKHMP follows the
symbol conventions described in note 1.
At recommended operating conditions with V DDDDR (1.8 V or 2.5 V) ± 5%.
MSC8144 Quad Core Digital Signal Processor Data Sheet, Rev. 16
Freescale Semiconductor
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