参数资料
型号: KMPC8544EAVTANG
厂商: Freescale Semiconductor
文件页数: 6/117页
文件大小: 0K
描述: IC MPU POWERQUICC III 783-PBGA
标准包装: 2
系列: MPC85xx
处理器类型: 32-位 MPC85xx PowerQUICC III
速度: 800MHz
电压: 1V
安装类型: 表面贴装
封装/外壳: 783-BBGA,FCBGA
供应商设备封装: 783-FCPBGA(29x29)
包装: 托盘
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 6
Freescale Semiconductor
103
Thermal
Chanhassen, MN 55317
Internet: www.bergquistcompany.com
Thermagon Inc. 888-246-9050
4707 Detroit Ave.
Cleveland, OH 44102
Internet: www.thermagon.com
20.3.3
Heat Sink Selection Examples
The following section provides a heat sink selection example using one of the commercially available heat
sinks.
For preliminary heat sink sizing, the die-junction temperature can be expressed as follows:
TJ = TI + TR + (θJC + θINT + θSA) × PD
where
TJ is the die-junction temperature
TI is the inlet cabinet ambient temperature
TR is the air temperature rise within the computer cabinet
θ
JC is the junction-to-case thermal resistance
θ
INT is the adhesive or interface material thermal resistance
θ
SA is the heat sink base-to-ambient thermal resistance
PD is the power dissipated by the device
During operation the die-junction temperatures (TJ) should be maintained within the range specified in
Table 2. The temperature of air cooling the component greatly depends on the ambient inlet air temperature
and the air temperature rise within the electronic cabinet. An electronic cabinet inlet-air temperature (TI)
may range from 30
° to 40° C. The air temperature rise within a cabinet (T
R) may be in the range of 5° to
10
° C. The thermal resistance of the thermal interface material (θ
INT) may be about 1° C/W. Assuming a
TI of 30° C, a TR of 5° C, a FC-PBGA package θJC = 0.1, and a power consumption (PD) of 5, the following
expression for TJ is obtained:
Die-junction temperature: TJ = 30° C + 5° C + (0.1° C/W + 1.0° C/W + θSA) × PD
The heat sink-to-ambient thermal resistance (
θ
SA) versus airflow velocity for a Thermalloy heat sink
#2328B is shown in Figure 64.
Assuming an air velocity of 1 m/s, we have an effective
θ
SA+ of about 5° C/W, thus
TJ = 30° + 5° C + (0.1° C/W + 1.0° C/W + 5° C/W) × 5
resulting in a die-junction temperature of approximately 66, which is well within the maximum operating
temperature of the component.
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