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参数资料
| 型号： | LE25U20AMB-AH |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/21页 |
| 文件大小： | 0K |
| 描述： | IC MEM 2MBIT SERIAL FLASH 8SOP |
| 标准包装： | 2,000 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 30MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
LE25U20AMB
3. Write Enable
Before performing any of the operations listed below, the device must be placed in the write enable state. Operation is
the same as for setting status register WEN to "1", and the state is enabled by inputting the write enable command.
"Figure 8 Write Enable" shows the timing waveforms when the write enable operation is performed. The write enable
command consists only of the first bus cycle, and it is initiated by inputting (06h).
? Small sector erase, sector erase, chip erase
? Page program
? Status register write
4. Write Disable
The write disable command sets status register WEN to "0" to prohibit unintentional writing. "Figure 9 Write Disable"
shows the timing waveforms. The write disable command consists only of the first bus cycle, and it is initiated by
inputting (04h). The write disable state (WEN "0") is exited by setting WEN to "1" using the write enable command
(06h).
CS
Figure 8 Write Enable
CS
Figure 9 Write Disable
Mode3
0 1 2 3 4 5 6 7
Mode3
0 1 2 3 4 5 6 7
SCK
Mode0
8CLK
SCK
Mode0
8CLK
SI
SO
06h
High Impedance
SI
SO
04h
High Impedance
5. Power-down
The power-down command sets all the commands, with the exception of the silicon ID read command and the
command to exit from power-down, to the acceptance prohibited state (power-down). "Figure 10 Power-down" shows
the timing waveforms. The power-down command consists only of the first bus cycle, and it is initiated by inputting
(B9h). However, a power-down command issued during an internal write operation will be ignored. The power-down
state is exited using the power-down exit command (power-down is exited also when one bus cycle or more of the
silicon ID read command (ABh) has been input). "Figure 11 Exiting from Power-down" shows the timing waveforms of
the power-down exit command.
CS
Figure 10 Power-down
Power down
mode
tDP
CS
Figure 11 Exiting from Power-down
Power down
mode
tPRB
Mode3
0 1 2 3 4 5 6 7
Mode3
0 1 2 3 4 5 6 7
SCK
Mode0
8CLK
SCK
Mode0
8CLK
SI
SO
B9h
High Impedance
SI
SO
ABh
High Impedance
No.A2097-10/21
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| LE25U20AMBM02-AH | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CFQ-AH | 制造商:ON Semiconductor 功能描述:REEL / S-FLASH MEMORY(4M) |
| LE25U40CMC | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:4M-bit (512K??8) Serial Flash Memory |
| LE25U40CMC-AH | 功能描述:闪存 S-FLASH MEMORY(4M) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CMCQ00-AH | 制造商:ON Semiconductor 功能描述:Flash S-FLASH MEMORY(4M) |
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