参数资料
型号: LE25U20AMB-AH
厂商: ON Semiconductor
文件页数: 13/21页
文件大小: 0K
描述: IC MEM 2MBIT SERIAL FLASH 8SOP
标准包装: 2,000
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 2M (256K x 8)
速度: 30MHz
接口: SPI 串行
电源电压: 2.3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
LE25U20AMB
10. Silicon ID Read
Silicon ID read is an operation that reads the manufacturer code and device code information. The silicon ID read
command is not accepted during writing.
Two methods are used for silicon ID reading. The first method involves inputting the 9Fh command: the setting is
completed with only the first bus cycle input, and in subsequent bus cycles the manufacturer code 62h, 2 bytes of device
ID code (Memory type, Memory capacity) and reserved code are repeatedly output in succession so long as the clock
input is continued. Refer to "Figure 16-a Silicon ID Read 1" for the waveforms. "Table 6_1 Silicon ID Read 1" lists the
silicon ID read1 codes.
The second method involves inputting the ABh command. This command consists of the first through fourth bus cycles,
and the 1 byte silicon ID can be read when 24 dummy bits are input after (ABh). Refer to "Figure 16-b Silicon ID Read
2" for the waveforms. "Table 6_2 Silicon ID Read 2" lists the silicon ID read2 code. If, after the device code has been
read, the SCK input is continued, the device code is output repeatedly.
The data is output starting with the falling clock edge of the fourth bus cycle bit 0, and silicon ID reading ends at the
rising CS edge.
Table 6_1 Silicon ID Read 1
Output Code
Table 6_2 Silicon ID Read 2
Output Code
Manufacturer code
62h
1Byte
44h
2Byte
Device ID
Memory Type
Memory Capacity
code
06h
12h(2MBit)
Device ID
Reserved code
Figure 16-a Silicon ID Read 1
CS
00h
Mode3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SCK
Mode0
8CLK
SI
9Fh
High Impedance
SO
62h
MSB
06h
MSB
12h
MSB
00h
MSB
06h
MSB
Figure 16-b Silicon ID Read 2
CS
Mode3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SCK
Mode0
8CLK
SI
SO
ABh
X
High Impedance
X
X
44h
44h
MSB
MSB
No.A2097-13/21
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