- 您现在的位置：买卖IC网 > Datasheet目录337 > LE25U20AMB-AH (ON Semiconductor)IC MEM 2MBIT SERIAL FLASH 8SOP Datasheet资料下载
参数资料
| 型号： | LE25U20AMB-AH |
| 厂商： | ON Semiconductor |
| 文件页数： | 9/21页 |
| 文件大小： | 0K |
| 描述： | IC MEM 2MBIT SERIAL FLASH 8SOP |
| 标准包装： | 2,000 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 30MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
LE25U20AMB
WEN (bit 1)
The WEN register is for detecting whether the device can perform write operations. If it is set to "0", the device will not
perform the write operation even if the write command is input. If it is set to "1", the device can perform write
operations in any area that is not block-protected.
WEN can be controlled using the write enable and write disable commands. By inputting the write enable command
(06h), WEN can be set to "1"; by inputting the write disable command (04h), it can be set to "0". In the following states,
WEN is automatically set to "0" in order to protect against unintentional writing.
? At power-on
? Upon completion of small sector erase, sector erase or chip erase
? Upon completion of page program
? Upon completion of status register write
* If a write operation has not been performed inside the LE25U20AMB because, for instance, the command input for
any of the write operations (small sector erase, sector erase, chip erase, page program, or status register write) has
failed or a write operation has been performed for a protected address, WEN will retain the status established prior to
the issue of the command concerned. Furthermore, its state will not be changed by a read operation.
BP0, BP1 (bits 2, 3)
Block protect BP0 and BP1 are status register bits that can be rewritten, and the memory space to be protected can be
set depending on these bits. For the setting conditions, refer to "Table 4 Protect level setting conditions".
Table 4 Protect Level Setting Conditions
Protect Level
BP1
Status Register Bits
BP0
Protected Area
0 (Whole area unprotected)
1 (1/4 protected)
2 (1/2 protected)
3 (Whole area protected)
0
0
1
1
0
1
0
1
None
30000h to 3FFFFh
20000h to 3FFFFh
00000h to 3FFFFh
* Chip erase is enabled only when the protect level is 0.
SRWP (bit 7)
Status register write protect SRWP is the bit for protecting the status registers, and its information can be rewritten.
When SRWP is "1" and the logic level of the WP pin is low, the status register write command is ignored, and status
registers BP0, BP1, and SRWP are protected. When the logic level of the WP pin is high, the status registers are not
protected regardless of the SRWP state. The SRWP setting conditions are shown in "Table 5 SRWP setting conditions".
Table 5 SRWP Setting Conditions
WP Pin
0
1
SRWP
0
1
0
1
Status Register Protect State
Unprotected
Protected
Unprotected
Unprotected
Bits 4, Bits 5, and Bits 6 are reserved bits, and have no significance.
No.A2097-9/21
相关PDF资料 |
PDF描述 |
|---|---|
| LFDAS12XSIT | HARDWARE MC9S12XS 112-PIN |
| LFXP10E-L-EV | BOARD EVAL LATTICEXP10E STD |
| LH28F008SCHT-TE | IC FLASH 8MBIT 85NS 40TSOP |
| LH28F160S3HNS-TV | IC FLASH 16MBIT 100NS 56SSOP |
| LH28F160S5HNS-S1 | IC FLASH 16MBIT 70NS 56SSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LE25U20AMBM02-AH | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CFQ-AH | 制造商:ON Semiconductor 功能描述:REEL / S-FLASH MEMORY(4M) |
| LE25U40CMC | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:4M-bit (512K??8) Serial Flash Memory |
| LE25U40CMC-AH | 功能描述:闪存 S-FLASH MEMORY(4M) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CMCQ00-AH | 制造商:ON Semiconductor 功能描述:Flash S-FLASH MEMORY(4M) |
发布紧急采购，3分钟左右您将得到回复。