- 您现在的位置：买卖IC网 > Datasheet目录337 > LE25U20AMB-AH (ON Semiconductor)IC MEM 2MBIT SERIAL FLASH 8SOP Datasheet资料下载
参数资料
| 型号： | LE25U20AMB-AH |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/21页 |
| 文件大小： | 0K |
| 描述： | IC MEM 2MBIT SERIAL FLASH 8SOP |
| 标准包装： | 2,000 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 30MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
LE25U20AMB
6. Small Sector Erase
Small sector erase is an operation that sets the memory cell data in any small sector to "1". A small sector consists of
4Kbytes. "Figure 12 Small Sector Erase" shows the timing waveforms, and Figure 21 shows a small sector erase
flowchart. The small sector erase command consists of the first through fourth bus cycles, and it is initiated by
inputting the 24-bit addresses following (D7h/20h). Addresses A17 to A12 are valid, and Addresses A23 to A18 are
"don't care". After the command has been input, the internal erase operation starts from the rising CS edge, and it ends
automatically by the control exercised by the internal timer. Erase end can also be detected using status register RDY.
Figure 12 Small Sector Erase
Self-timed
Erase Cycle
tSSE
CS
Mode3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
Mode0
8CLK
SI
D7h/20h
Add.
Add.
Add.
SO
High Impedance
7. Sector Erase
Sector erase is an operation that sets the memory cell data in any sector to "1". A sector consists of 64Kbytes. "Figure
13 Sector Erase" shows the timing waveforms, and Figure 21 shows a sector erase flowchart. The sector erase command
consists of the first through fourth bus cycles, and it is initiated by inputting the 24-bit addresses following (D8h).
Addresses A17 to A16 are valid, and Addresses A23 to A18 are "don't care". After the command has been input, the
internal erase operation starts from the rising CS edge, and it ends automatically by the control exercised by the internal
timer. Erase end can also be detected using status register RDY.
Figure 13 Sector Erase
Self-timed
Erase Cycle
tSE
CS
Mode3
0 1 2 3 4 5 6 7 8
15 16
23 24
31
SCK
Mode0
8CLK
SI
D8h
Add.
Add.
Add.
SO
High Impedance
No.A2097-11/21
相关PDF资料 |
PDF描述 |
|---|---|
| LFDAS12XSIT | HARDWARE MC9S12XS 112-PIN |
| LFXP10E-L-EV | BOARD EVAL LATTICEXP10E STD |
| LH28F008SCHT-TE | IC FLASH 8MBIT 85NS 40TSOP |
| LH28F160S3HNS-TV | IC FLASH 16MBIT 100NS 56SSOP |
| LH28F160S5HNS-S1 | IC FLASH 16MBIT 70NS 56SSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| LE25U20AMBM02-AH | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CFQ-AH | 制造商:ON Semiconductor 功能描述:REEL / S-FLASH MEMORY(4M) |
| LE25U40CMC | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:4M-bit (512K??8) Serial Flash Memory |
| LE25U40CMC-AH | 功能描述:闪存 S-FLASH MEMORY(4M) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CMCQ00-AH | 制造商:ON Semiconductor 功能描述:Flash S-FLASH MEMORY(4M) |
发布紧急采购，3分钟左右您将得到回复。