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参数资料
| 型号： | LE25U20AMB-AH |
| 厂商： | ON Semiconductor |
| 文件页数： | 12/21页 |
| 文件大小： | 0K |
| 描述： | IC MEM 2MBIT SERIAL FLASH 8SOP |
| 标准包装： | 2,000 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 30MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
LE25U20AMB
8. Chip Erase
Chip erase is an operation that sets the memory cell data in all the sectors to "1". "Figure 14 Chip Erase" shows the
timing waveforms, and Figure 21 shows a chip erase flowchart. The chip erase command consists only of the first bus
cycle, and it is initiated by inputting (C7h). After the command has been input, the internal erase operation starts from
the rising CS edge, and it ends automatically by the control exercised by the internal timer. Erase end can also be
detected using status register RDY.
Figure 14 Chip Erase
Self-timed
Erase Cycle
tCHE
CS
Mode3
0 1 2 3 4 5 6 7
SCK
Mode0
8CLK
SI
SO
C7h
High Impedance
9. Page Program
Page program is an operation that programs any number of bytes from 1 to 256 bytes within the same sector page (page
addresses: A17 to A8). Before initiating page program, the data on the page concerned must be erased using small
sector erase, sector erase, or chip erase. "Figure 15 Page Program" shows the page program timing waveforms, and
Figure 22 shows a page program flowchart. After the falling CS, edge, the command (02H) is input followed by the
24-bit addresses. Addresses A17 to A0 are valid. The program data is then loaded at each rising clock edge until the
rising CS edge, and data loading is continued until the rising CS edge. If the data loaded has exceeded 256 bytes, the
256 bytes loaded last are programmed. Th e program data must be loaded in 1-byte increments, and the program
operation is not performed at the rising CS edge occurring at any other timing. The page program time is 2.0ms (typ.)
when 256 bytes (1 page) are programmed at one time.
Figure 15 Page Program
Self-timed
Program Cycle
tPP
CS
Mode3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
2079
SCK
Mode0
8CLK
SI
02h
Add.
Add.
Add.
PD
PD
PD
SO
High Impedance
No.A2097-12/21
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相关代理商/技术参数 |
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| LE25U20AMBM02-AH | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CFQ-AH | 制造商:ON Semiconductor 功能描述:REEL / S-FLASH MEMORY(4M) |
| LE25U40CMC | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:4M-bit (512K??8) Serial Flash Memory |
| LE25U40CMC-AH | 功能描述:闪存 S-FLASH MEMORY(4M) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| LE25U40CMCQ00-AH | 制造商:ON Semiconductor 功能描述:Flash S-FLASH MEMORY(4M) |
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