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参数资料
型号： LFEC1E-3TN100C
厂商： Lattice Semiconductor Corporation
文件页数： 81/163页
文件大小： 0K
描述： IC FPGA 1.5KLUTS 67I/O 100-TQFP
标准包装： 90
系列： EC
逻辑元件/单元数： 1500
RAM 位总计： 18432
输入/输出数： 67
电源电压： 1.14 V ~ 1.26 V
安装类型： 表面贴装
工作温度： 0°C ~ 85°C
封装/外壳： 100-LQFP
供应商设备封装： 100-TQFP（14x14）
其它名称： 220-1233
2-21
Architecture
LatticeECP/EC Family Data Sheet
For further information about the sysDSP block, please see the list of technical information at the end of this data
sheet.
Programmable I/O Cells (PIC)
Each PIC contains two PIOs connected to their respective sysI/O Buffers which are then connected to the PADs as
shown in Figure 2-24. The PIO Block supplies the output data (DO) and the Tri-state control signal (TO) to sysI/O
buffer, and receives input from the buffer.
Figure 2-24. PIC Diagram
Two adjacent PIOs can be joined to provide a differential I/O pair (labeled as “T” and “C”) as shown in Figure 2-25.
The PAD Labels “T” and “C” distinguish the two PIOs. Only the PIO pairs on the left and right edges of the device
can be configured as LVDS transmit/receive pairs.
One of every 16 PIOs contains a delay element to facilitate the generation of DQS signals. The DQS signal feeds
the DQS bus which spans the set of 16 PIOs. Figure 2-25 shows the assignment of DQS pins in each set of 16
PIOs. The exact DQS pins are shown in a dual function in the Logic Signal Connections table at the end of this data
sheet. Additional detail is provided in the Signal Descriptions table at the end of this data sheet. The DQS signal
from the bus is used to strobe the DDR data from the memory into input register blocks. This interface is designed
for memories that support one DQS strobe per eight bits of data.
PIO B
PADA
"T"
PADB
"C"
OPOS0
ONEG0
OPOS1
ONEG1
TD
INCK
INDD
INFF
IPOS0
IPOS1
CLK
CE
LSR
GSRN
PIO A
sysIO
Buffer
DQS
DDRCLKPOL
IOLD0
IOLT0
D0
DDRCLK
DI
IPOS1
IPOS0
INCK
INDD
INFF
D0
D1
TD
D1
Output
Register Block
(2 Flip Flops)
Tristate
Register Block
(2 Flip Flops)
DDRCLK
Input
Register Block
(5 Flip Flops)
CLKO
CLKI
CEO
CEI
Control
Muxes
LSR
GSR
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相关代理商/技术参数
参数描述
LFEC1E-3TN100I 功能描述:FPGA - 现场可编程门阵列 1.5K LUTs 67 I/O 1.2V -3 Speed IND RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC1E-3TN144C 功能描述:FPGA - 现场可编程门阵列 1.5K LUTs Pb-Free RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC1E-3TN144I 功能描述:FPGA - 现场可编程门阵列 1.5K LUTs 97 I/O 1.2V -3 Speed IND RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 栅极数量: 逻辑块数量:943 内嵌式块RAM - EBR:1956 kbit 输入/输出端数量:128 最大工作频率:800 MHz 工作电源电压:1.1 V 最大工作温度:+ 70 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-256
LFEC1E-4F256C 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
LFEC1E-4F256I 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:LatticeECP/EC Family Data Sheet
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