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参数资料
| 型号： | LM5051MAEVAL/NOPB |
| 厂商： | National Semiconductor |
| 文件页数： | 4/23页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR LM5051MA |
| 标准包装： | 1 |
| 主要目的： | 电源管理，O 环控制器/低压侧 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | LM5051 |
| 已供物品： | 板 |
SNVS702D – OCTOBER 2011 – REVISED MARCH 2013
Electrical Characteristics
Limits in standard type are for T J = 25°C only; limits in boldface type apply over the operating junction temperature (T J )
range of -40°C to +125°C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical
values represent the most likely parametric norm at T J = 25°C, and are provided for reference purposes only. Unless
otherwise stated all conditions and measurements are referenced to device pin 7 (INP/VSS), and the following conditions
apply: V LINE = 48.0V, V INN = -150 mV, V OFF = 0.0V, C GATE = 47 nF, C VCC = 0.1 μF, and T J = 25°C.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
LINE Pin
I LINE
LINE Pin current
V LINE = 48.0V
VCC Pin = Open
-
690
780
μ A
VCC Pin
VCC
V Z
Δ V Z
I VCC
Operating Voltage Range
VCC Shunt Zener Voltage
Shunt Zener Regulation
Supply Current
LINE Pin = Open
I VCC = 2 mA
I VCC = 10 mA
I VCC = 2 mA to 10 mA
V VCC = V Z - 100mV
V VCC = 5.0V
4.50
11.9
12.5
-
-
-
-
13.0
13.5
0.50
1.0
0.4
V Z
14.3
14.5
1.11
1.50
1.10
V
V
V
mA
INN Pin
I INN
INN Pin Current
V INN = 0.0V
V INN = 90V
-
-
3.1
0.04
-
-
μ A
GATE
GATE Charge Current
V GATE = 5.5V
V INN = -150mV
0.28
0.66
0.95
mA
I GATE
V GATE = 5.5V
GATE Discharge Current
V INN = -150 mV to +300 mV
2.4
3.5
-
A
t ≤ 10 ms
V LINE = 48.0V
-
13.0
-
V GATE
GATE Pin High Voltage
V VCC = 10.25V, LINE = Open
9.98
10.2
-
V
V VCC = 5.0V, LINE= Open
4.70
4.95
-
V SD(REV)
Reverse Threshold
V INN going negative until Gate
Drive Turns ON
-112.2
-45
+11.4
mV
Δ V SD(REV)
Reverse Threshold Hysteresis
V INN going positive from
V SD(REV) Threshold until Gate
-
50
-
mV
Drive Turns OFF
V SD(REG)
Regulated V INP/VSS to V INN Threshold
-10.8
12
30.8
mV
C GATE = 0
t GATE(REV)
t GATE(OFF)
Gate Capacitance Discharge Time at
Forward to Reverse Transition
Gate Capacitance Discharge Time at
OFF pin Low to High Transition
(1)
C GATE = 10 nF
C GATE = 47 nF
C GATE = 47 nF
(1)
(1)
(2)
-
-
-
-
34
60
90
120
50
-
230
-
ns
ns
OFF Pin
V OFF(IH)
V OFF(IL)
Δ V OFF
I OFF(IH)
I OFF(IL)
OFF Input High Threshold Voltage
OFF Input Low Threshold Voltage
OFF Threshold Voltage Hysteresis
OFF Pin Internal Pull-down
V INN = -400 mV
V OFF Rising until Gate is Low
V INN = -400 mV
V OFF Falling until Gate is High
V OFF(IH) - V OFF(IL)
V OFF = 5.0V
V OFF = 0.0V
1.28
-
-
-
-
1.50
1.48
20
4.6
-0.03
1.65
-
-
6.00
-
V
mV
μA
μA
(1)
(2)
Time from V INN voltage transition from -200 mV to +500 mV until Gate pin voltage falls to ≤ 1.00V. See Figure 6
Time from V OFF voltage transition from 0.0V to 5.0V until GATE pin voltage falls to ≤ 1.0V. See Figure 7
4
Product Folder Links: LM5051
Copyright ? 2011–2013, Texas Instruments Incorporated
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