参数资料
型号: LT3487EDD#PBF
厂商: Linear Technology
文件页数: 9/16页
文件大小: 0K
描述: IC REG BOOST INV ADJ 10DFN
标准包装: 121
类型: 升压(升压),反相
输出类型: 可调式
输出数: 1
输出电压: 1.23 V ~ 28 V
输入电压: 2.3 V ~ 16 V
PWM 型: 电流模式
频率 - 开关: 2MHz
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-WFDFN 裸露焊盘
包装: 管件
供应商设备封装: 10-DFN(3x3)
产品目录页面: 1331 (CN2011-ZH PDF)
LT3487
APPLICATIO S I FOR ATIO
Table 2. Recommended Ceramic Capacitor Manufacturers
where L is the inductance, r is the resistance of the inductor
MANUFACTURER
Taiyo Yuden
Murata
PHONE
(408) 573-4150
(814) 237-1431
URL
www.t-yuden.com
www.murata.com
and C is the output capacitance. For low DCR inductors,
which is usually the case for this application, the peak
inrush current can be simpli?ed as follows:
I P = IN
? e ? ω 2 ?
Kemet                       (408) 986-0424 www.kemet.com
Inrush Current
The LT3487 uses internal Schottky diodes. When a sup-
V – 0.6
L ? ω
? α π ?
? – ? ?
ply voltage is abruptly applied to the V IN pin, the voltage
difference between V IN and V CAP generates inrush current
?owing from the input through the inductor L1 and the
Table 3 gives inrush peak currents for some component
selections. Note that inrush current is not a concern if the
input voltage rises slowly.
internal Schottky diode DP to charge the boost output
capacitor C4. For the inverting channel, there is a similar
inrush current ?owing from the input through the inductor
Table 3. Inrush Peak Current
V IN (V) R ( Ω )
5 0.18
L (μH)
10
C (μF)
4.7
I P (A)
1.44
L2 path, charging the ?ying capacitor C2 and returning
through the internal Schottky diode DN. The maximum
current the Schottky diodes in the LT3487 can sustain is
2A . The selection of inductor and capacitor values should
5
3.6
3.6
3.6
0.235
0.18
0.245
0.345
15
10
10
15
2.2
4.7
4.7
2.2
1.06
0.979
0.958
0.704
ensure that the peak inrush current is below 2A. The peak
inrush current can be calculated as follows:
External Diode Selection
I P = IN
α =
? α ? ?
? e ω
? α ? ? ? ?
? SIN ? arctan ?
V – 0.6
L ? ω
r + 1 . 5
2 ? L
α ? ω ?
– ?arctan ?
? ? ω ? ?
?
As stated previously, the LT3487 has internal Schottky
diodes. The Schottky diode, DP, is suf?cient for most
step-up applications. However, for high current inverter
applications, a properly selected external Schottky diode in
parallel with DN can improve ef?ciency. For external diode
selection, both forward voltage drop and diode capacitance
ω =
1
L ? C
r
4 ? L 2
need to be considered. Schottky diodes rated for higher
current usually have lower forward voltage drops and
larger capacitance, which can cause signi?cant switching
losses at a 2MHz switching frequency. Some recommended
Schottky diodes are listed in Table 4.
Table 4. Recommended Schottky Diodes
DIODE CAPACITANCE
PART NUMBER
PMEG2010AEB
FORWARD CURRENT (mA)
1000
FORWARD VOLTAGE DROP (V)
0.51
(pF at 10V)
7.5
MANUFACTURER
Philips
www.semiconductors.
philips.com
CMDSH2-3
200
0.49
15
Central Semiconductor
www.centralsemi.com
RSX051VA-30
500
0.35
30
ROHM
www.rohm.com
ZHCS400
400
0.425
18
Zetex
www.zetex.com
3487f
9
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