参数资料
型号: LT3581EMSE#PBF
厂商: Linear Technology
文件页数: 16/36页
文件大小: 0K
描述: IC REG MULTI CONFIG ADJ 16MSOP
标准包装: 37
类型: 升压(升压),反相,回扫,Sepic
输出类型: 可调式
输出数: 1
输出电压: 1.22 V ~ 42 V
输入电压: 2.5 V ~ 22 V
PWM 型: 电流模式
频率 - 开关: 200kHz ~ 2.5MHz
电流 - 输出: 3.3A
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-TFSOP(0.118",3.00mm 宽)裸露焊盘
包装: 管件
供应商设备封装: 16-MSOP,裸露焊盘
LT3581
APPLICATIONS INFORMATION
LAYOUT GUIDELINES FOR BOOST, SEPIC, AND DUAL
INDUCTOR INVERTING TOPOLOGIES
General Layout Guidelines
? To optimize thermal performance, solder the exposed
ground pad of the LT3581 to the ground plane, with
multiple vias around the pad connecting to additional
ground planes.
? A ground plane should be used under the switcher circuitry
to prevent interplane coupling and overall noise.
? High speed switching path (see specific topology for
more information) must be kept as short as possible.
? The V C , FB, and RT components should be placed as
close to the LT3581 as possible, while being as far
away as practically possible from the switch node. The
ground for these components should be separated from
the switch current path.
? Place the bypass capacitor for the V IN pin as close as
possible to the LT3581.
? Place the bypass capacitor for the inductor as close as
possible to the inductor.
? The load should connect directly to the positive and
negative terminals of the output capacitor for best load
regulation.
Boost Topology Specific Layout Guidelines
? Keep length of loop (high speed switching path) gov -
erning switch, diode D1, output capacitor C OUT1 , and
ground return as short as possible to minimize parasitic
inductive spikes at the switch node during switching.
SEPIC Topology Specific Layout Guidelines
? Keep length of loop (high speed switching path) gov -
erning switch, flying capacitor C1, diode D1, output
capacitor C OUT , and ground return as short as possible
to minimize parasitic inductive spikes at the switch node
during switching.
Inverting Topology Specific Layout Guidelines
? Keep ground return path from the cathode of D1 (to
chip) separated from output capacitor C OUT ’s ground
return path (to chip) in order to minimize switching
noise coupling into the output.
? Keep length of loop (high speed switching path) govern -
ing switch, flying capacitor C1, diode D1, and ground
return as short as possible to minimize parasitic induc-
tive spikes at the switch node during switching.
GND
GND
1
16
SYNC
1
2
3
4
17
16
15
14
13
SYNC
SHDN
2
3
4
5
17
15
14
13
12
SHDN
CLKOUT
V IN
+
C IN
L1
A
5
6
7
8
12
11
10
9
D1
B
C OUT
C OUT1
M1
CLKOUT
V OUT
+
V IN
+
C IN
L1
A
6
7
8
L2
C1
11
10
9
D1
B
C OUT
V OUT
+
D2
R GATE
3581 F09
3581 F08
A: RETURN C IN GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED TO NOT
COMBINE C IN GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
B: RETURN C OUT AND C OUT1 GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE C OUT AND C OUT1 GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
Figure 8. Suggested Component Placement for Boost Topology
(MSOP Shown, DFN Similar, Not to Scale.) Pin 15 on DFN or
Pin 17 on MSOP Is the Exposed Pad Which Must Be Soldered
Directly to the Local Ground Plane for Adequate Thermal
Performance. Multiple Vias to Additional Ground Planes Will
Improve Thermal Performance
A: RETURN C IN AND L2 GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE C IN AND L2 GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
B: RETURN C OUT GROUNDS DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE C OUT GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
L1, L2: MOST COUPLED INDUCTOR MANUFACTURERS USE CROSS PINOUT FOR IMPROVED
PERFORMANCE.
Figure 9. Suggested Component Placement for SEPIC Topology
(MSOP Shown, DFN Similar, Not to Scale.) Pin 15 on DFN or
Pin 17 on MSOP Is the Exposed Pad Which Must Be Soldered
Directly to the Local Ground Plane for Adequate Thermal
Performance. Multiple Vias to Additional Ground Planes Will
Improve Thermal Performance
3581fa
16
For more information www.linear.com/LT3581
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