参数资料
型号: LT3581EMSE#PBF
厂商: Linear Technology
文件页数: 17/36页
文件大小: 0K
描述: IC REG MULTI CONFIG ADJ 16MSOP
标准包装: 37
类型: 升压(升压),反相,回扫,Sepic
输出类型: 可调式
输出数: 1
输出电压: 1.22 V ~ 42 V
输入电压: 2.5 V ~ 22 V
PWM 型: 电流模式
频率 - 开关: 200kHz ~ 2.5MHz
电流 - 输出: 3.3A
同步整流器:
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-TFSOP(0.118",3.00mm 宽)裸露焊盘
包装: 管件
供应商设备封装: 16-MSOP,裸露焊盘
LT3581
APPLICATIONS INFORMATION
1
2
3
4
17
GND
16
15
14
13
SYNC
SHDN
the heat generated within the package. This can be
accomplished by taking advantage of the thermal pad on
the underside of the IC. It is recommended that multiple
vias in the printed circuit board be used to conduct heat
away from the IC and into a copper plane with as much
area as possible.
V IN
C OUT
– V OUT
5 12 CLKOUT
C IN 6 11
A
7 10
B
8 9
+ C GND
C1
D1
L1 L2
3581 F10
A: RETURN C IN GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE C IN GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
B: RETURN C OUT GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE C OUT GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
C: RETURN D1 GROUND DIRECTLY TO LT3581 EXPOSED PAD PIN 17. IT IS ADVISED
TO NOT COMBINE D1 GROUND WITH GND EXCEPT AT THE EXPOSED PAD.
L1, L2: MOST COUPLED INDUCTOR MANUFACTURERS USE CROSS PINOUT FOR
IMPROVED PERFORMANCE.
Figure 10. Suggested Component Placement for Dual Inductor
Inverting Topology (MSOP Shown, DFN Similar, Not to Scale.)
Pin 15 on DFN or Pin 17 on MSOP Is the Exposed Pad Which
Must Be Soldered Directly to the Local Ground Plane for
Adequate Thermal Performance. Multiple Vias to Additional
Ground Planes Will Improve Thermal Performance
THERMAL CONSIDERATIONS
Overview
Power and Thermal Calculations
Power dissipation in the LT3581 chip comes from four
primary sources: switch I 2 R losses, switch dynamic
losses, NPN base drive DC losses, and miscellaneous
input current losses. These formulas assume continuous
mode operation, so they should not be used for calculating
thermal losses or efficiency in discontinuous mode or at
light load currents.
The following example calculates the power dissipa-
tion in the LT3581 for a particular boost application
(V IN = 5V, V OUT = 12V, I OUT = 0.83A, f OSC = 2MHz, V D = 0.45V,
V CESAT = 0.21V).
To calculate die junction temperature, use the appropriate
thermal resistance number and add in worst-case ambient
temperature:
T J = T A + θ JA ? P TOTAL
For the LT3581 to deliver its full output power, it is imp-
erative that a good thermal path be provided to dissipate
Table 4. Power Calculations Example for Boost Converter with V IN = 5V, V OUT = 12V, I OUT = 0.83A, f OSC = 2MHz, V D = 0.45V, V CESAT = 0.21V
DEFINITION OF VARIABLES
EQUATIONS
DESIGN EXAMPLE
VALUE
DC = SWITCH DUTY CYCLE
DC =
V OUT – V IN + V D
V OUT + V D – V CESAT
DC =
12 V – 5 V + 0 . 45 V
12 V + 0 . 45 V – 0 . 21 V
DC = 60.9%
I IN = Average Switch Current
η = Power Conversion Efficiency
(typically 88% at high currents)
I IN =
V OUT ? I OUT
V IN ? η
I IN =
12 V ? 0. 83 A
5 V ? 0 . 88
I IN = 2.3A
P SWDC = Switch I 2 R Loss (DC)
R SW = Switch Resistance (typically
90mΩ combined SW1 and SW2)
P SWAC = Switch Dynamic Loss (AC)
P SWDC = DC ? I IN 2 ? R SW
P SWAC = 13 ns ? I IN ? V OUT ? f OSC
P SWDC = 0 . 609 ? ( 2 . 3 A ) 2 ? 90 m ?
P SWAC = ( 13 ns ) ? 2 . 3 A ? 12 V ? ( 2 MHz )
P SWDC = 290mW
P SWAC = 718mW
P BDC = Base Drive Loss (DC)
P BDC =
V IN ? I IN ? DC
45
P BDC =
5 V ? 2. 3 A ? 0 .609
45
P BDC = 156mW
P INP = Input Power Loss
P INP = 9 mA ? V IN
P INP = 9 mA ? 5 V
P INP = 45mW
P TOTAL = 1.209W
3581fa
For more information www.linear.com/LT3581
17
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