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参数资料
| 型号： | LTC3783IFE#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 11/24页 |
| 文件大小： | 0K |
| 描述： | IC LED DRVR PWM CONTROL 16-TSSOP |
| 标准包装： | 95 |
| 恒定电流： | 是 |
| 恒定电压： | 是 |
| 拓扑： | 回扫，PWM，SEPIC，降压（降压），升压（升压） |
| 输出数： | 1 |
| 内部驱动器： | 无 |
| 类型 - 主要： | 车载，通用 |
| 频率： | 20kHz ~ 1MHz |
| 电源电压： | 3 V ~ 36 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm）裸露焊盘 |
| 供应商设备封装： | 16-TSSOP-EP |
| 包装： | 管件 |
| 工作温度： | -40°C ~ 125°C |
LTC3783
OPERATION
INTV CC Regulator Bypassing and Operation
An internal, P-channel low dropout voltage regulator pro-
duces the 7V supply which powers the gate drivers and
logic circuitry within the LTC3783 as shown in Figure 3.
The INTV CC regulator can supply up to 50mA and must be
bypassed to ground immediately adjacent to the IC pins
with a minimum of 4.7μF low ESR or ceramic capacitor.
Good bypassing is necessary to supply the high transient
currents required by the MOSFET gate driver.
For input voltages that don’t exceed 8V (the absolute
maximum rating for INTV CC is 9V), the internal low dropout
regulator in the LTC3783 is redundant and the INTV CC pin
can be shorted directly to the V IN pin. With the INTV CC
pin shorted to V IN , however, the divider that programs the
regulated INTV CC voltage will draw 15μA from the input sup-
ply, even in shutdown mode. For applications that require
the lowest shutdown mode input supply current, do not
connect the INTV CC pin to V IN . Regardless of whether the
INTV CC pin is shorted to V IN or not, it is always necessary
to have the driver circuitry bypassed with a 4.7μF low ESR
ceramic capacitor to ground immediately adjacent to the
INTV CC and GND pins.
In an actual application, most of the IC supply current is
used to drive the gate capacitance of the power MOSFET.
As a result, high input voltage applications in which a
large power MOSFET is being driven at high frequencies
can cause the LTC3783 to exceed its maximum junction
temperature rating. The junction temperature can be
estimated using the following equations:
I Q(TOT) = I Q + f ? Q G
P IC = V IN ? (I Q + f ? Q G )
T J = T A + P IC ? θ JA
The total quiescent current I Q(TOT) consists of the static
supply current (I Q ) and the current required to charge and
discharge the gate of the power MOSFET. The 16-lead FE
package has a thermal resistance of θ JA = 38°C/W and
the DHD package has an θ JA = 43°C/W
As an example, consider a power supply with V IN = 12V
and V OUT = 25V at I OUT = 1A. The switching frequency is
300kHz, and the maximum ambient temperature is 70°C.
The power MOSFET chosen is the Si7884DP, which has a
maximum R DS(ON) of 10mΩ (at room temperature) and
1.230V
P-CH
V IN
C IN
INPUT
SUPPLY
6V TO 36V
R2
R1
7V
INTV CC
LOGIC
DRIVER
GATE
C VCC
4.7μF
X5R
M1
6V-RATED
POWER
MOSFET
GND
3783 F03
GND
PLACE AS CLOSE AS
POSSIBLE TO DEVICE PINS
Figure 3. Bypassing the LDO Regulator and Gate Driver Supply
3783fb
11
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