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参数资料
| 型号： | M25PE10-VMP6P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 16/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMP6P |
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Operating features
M25PE20, M25PE10
16/60
Table 2.
●
The second Software Protected mode (SPM2)
uses the Block Protect (BP1, BP0,
see
Section 6.4.3
)) bits to allow part of the memory to be configured as read-only.
Table 3.
Table 4.
Software protection truth table (Sectors 0 to 3 for M25PE20 or sectors 0
to 1 for M25PE10, 64-Kbyte granularity)
Sector Lock Register
Protection status
Lock
Down bit
Write
Lock bit
0
0
Sector unprotected from Program/Erase/Write operations, Protection status
reversible
0
1
Sector protected from Program/Erase/Write operations, Protection status
reversible
1
0
Sector Unprotected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Sector Protected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
Protected area sizes for M25PE20
Status Register
content
Memory content
BP1 Bit BP0 Bit
Protected area
Unprotected area
0
0
none
All sectors
(1)
(four sectors: 0 to 3)
1.
The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect bits (BP1, BP0) are 0.
0
1
Upper quarter (Sector 3)
Lower three quarters (three sectors: 0 to 2)
1
0
Upper half (two sectors: 2 and 3)
Lower half (two sectors: 0 to 1)
1
1
All sectors (four sectors: 0 to 3)
none
Protected area sizes for M25PE10
Status Register
content
Memory content
BP1 Bit BP0 Bit
Protected area
Unprotected area
0
0
none
All sectors
(1)
(two sectors: 0 and 1)
1.
The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect bits (BP1, BP0) are 0.
0
1
Upper half (1 sector: sector 1)
Lower half (one sector: sector 0)
1
0
Upper half (1 sector: sector 1)
Lower half (one sector: sector 0)
1
1
All sectors (two sectors: 0 and 1)
none
相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| M25PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6G | 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE16-VMP6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
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