- 您现在的位置：买卖IC网 > PDF目录377803 > M25PE10-VMP6P (意法半导体) 4 Mbit Uniform Sector, Serial Flash Memory PDF资料下载
参数资料
| 型号： | M25PE10-VMP6P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 44/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMP6P |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页当前第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页
Power-up and power-down
M25PE20, M25PE10
44/60
7
Power-up and power-down
At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must
follow the voltage applied on V
CC
) until V
CC
reaches the correct value:
V
CC
(min) at Power-up, and then for a further delay of t
VSL
V
SS
at Power-down
A safe configuration is provided in
Section 3: SPI modes
.
●
●
To avoid data corruption and inadvertent write operations during power up, a Power On
Reset (POR) circuit is included. The logic inside the device is held reset while V
CC
is less
than the Power On Reset (POR) threshold value, V
WI
– all operations are disabled, and the
device does not respond to any instruction.
Moreover, the device ignores all Write Enable (WREN), Page Write (PW), Page Program
(PP), Page Erase (PE) and Sector Erase (SE) instructions until a time delay of t
PUW
has
elapsed after the moment that V
CC
rises above the V
WI
threshold. However, the correct
operation of the device is not guaranteed if, by this time, V
CC
is still below V
CC
(min). No
Write, Program or Erase instructions should be sent until the later of:
t
PUW
after V
CC
passed the V
WI
threshold
t
VSL
after V
CC
passed the V
CC
(min) level
These values are specified in
Table 13
.
●
●
If the delay, t
VSL
, has elapsed, after V
CC
has risen above V
CC
(min), the device can be
selected for READ instructions even if the t
PUW
delay is not yet fully elapsed.
As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration
of the Power-up and Power-down phases.
At Power-up, the device is in the following state:
The device is in the Standby Power mode (not the Deep Power-down mode).
The Write Enable Latch (WEL) bit is reset.
The Write In Progress (WIP) bit is reset
The Lock Registers are reset (Write Lock bit, Lock Down bit) = (0, 0)
●
●
●
●
Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply.
Each device in a system should have the VCC rail decoupled by a suitable capacitor close to
the package pins. (Generally, this capacitor is of the order of 100 nF).
At Power-down, when VCC drops from the operating voltage, to below the Power On Reset
(POR) threshold voltage, VWI, all operations are disabled and the device does not respond
to any instruction. (The designer needs to be aware that if a Power-down occurs while a
Write, Program or Erase cycle is in progress, some data corruption can result.)
相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| M25PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6G | 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE16-VMP6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
发布紧急采购，3分钟左右您将得到回复。