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| 型号： | M25PE10-VMP6P |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 25/60页 |
| 文件大小： | 310K |
| 代理商： | M25PE10-VMP6P |
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M25PE20, M25PE10
Instructions
25/60
6.3
Read Identification (RDID)
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be
read, followed by two Bytes of device identification. The manufacturer identification is
assigned by JEDEC, and has the value 20h for STMicroelectronics. The device identification
is assigned by the device manufacturer, and indicates the memory type in the first Byte
(80h), and the memory capacity of the device in the second Byte (12h for the M25PE20 and
11h for the M25PE10).
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data Output (Q), each bit being shifted out during
the falling edge of Serial Clock (C).
The instruction sequence is shown in
Figure 10
.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in
the Standby Power mode, the device waits to be selected, so that it can receive, decode and
execute instructions.
Table 8.
Figure 10.
Read Identification (RDID) instruction sequence and data-out sequence
Read Identification (RDID) data-out sequence
Manufacturer Identification
Device Identification
Memory Type
Memory Capacity
20h
80h
12h (M25PE20)
20h
80h
11h (M25PE10)
C
D
S
2
1
3
4
5
6
7
8
9 10 11 12 13 14 15
Instruction
0
AI06809
Q
Manufacturer Identification
High Impedance
MSB
15 14 13
3
2
1
0
Device Identification
MSB
16 16 18
28 29 30 31
相关PDF资料 |
PDF描述 |
|---|---|
| M25PE10-VMP6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE10-VMP6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20_07 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE20-VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25PE10-VMP6TG | 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| M25PE10-VMP6TP | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout |
| M25PE16 | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
| M25PE16-VMP6G | 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25PE16-VMP6P | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout |
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