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参数资料
型号： M25PE10-VMP6P
厂商： 意法半导体
元件分类： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位统一部门，串行闪存
文件页数： 59/60页
文件大小： 310K
代理商： M25PE10-VMP6P
M25PE20, M25PE10
Revision history
59/60
14
Revision history
Table 28.
Document revision history
Date
Version
Changes
07-Dec-2004
0.1
Document written
21-Dec-2004
0.2
Notes 1 and 2 removed from
Table 27: Ordering information scheme
.
S08N silhouette corrected
on page 1
.
6-Oct-2005
1.0
Added <Blue>Table 21., AC characteristics (33 MHz operation).
Document status promoted to full Datasheet.
An easy way to modify
data
,
A fast way to modify data
,
Page Write (PW)
and
Page Program
(PP)
sections updated to explain optimal use of Page Write and Page
Program instructions. Clock slew rate changed from 0.03 to 0.1 V/ns.
Updated <Blue>Table 27., Ordering information scheme. Added
Ecopack information.
10-Jul-2006
2
Document converted to the new ST template.
MLP package removed, SO8N package specifications updated (see
Section 12: Package mechanical
).
Figure 5: SPI modes supported
updated and
Note 2
added. Timing line
of t
SHQZ
moved in
Figure 29
.
25-Jan-2007
3
50 MHz frequency added. VFQFPN package added (see
Section 12:
Package mechanical
).
The sectors are further divided up into subsectors (see
Table 5:
M25PE20 memory organization
and
Table 6: M25PE10 memory
organization
).
Important note on page 6
added.
Figure 4: Bus master
and memory devices on the SPI bus
updated and explanatory paragraph
added.
VCC supply voltage
and
VSS ground
added.
Section 4.8:
Protection modes
modified.
Section 8: Reset
added, Reset timings table
split into
Table 23: Reset conditions
and
Table 24: Timings after a Reset
Low pulse
.
At Power-up the WIP bit is reset and the Lock Registers are reset (see
Section 7: Power-up and power-down
).
V
IO
max changed in
Table 15: Absolute maximum ratings
.
M25PE20 and M25PE10 products processed in T9HX process added to
datasheet:
– WP pin replaces TSL (T7X technology), see
Section 2.7: Write Protect
(W) or Top Sector Lock (TSL)
–
Read Lock Register (RDLR)
,
Write to Lock Register (WRLR)
,
Write
Status Register (WRSR)
,
SubSector Erase (SSE)
and
Bulk Erase
(BE)
instructions added for T9HX process
– subsector protection granularity removed in T9HX process, still exists
in T7X process
–
Table 5: M25PE20 memory organization
and
Table 6: M25PE10
memory organization
updated to show subsectors
– Status Register
BP1, BP0 bits
and
SRWD bit
added.
Small text changes.
相关PDF资料
PDF描述
M25PE10-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE10-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20_07 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25PE20-VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
M25PE10-VMP6TG 功能描述:IC FLASH 1MBIT 75MHZ 8VFQFPN RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Forté™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ
M25PE10-VMP6TP 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout
M25PE16 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
M25PE16-VMP6G 功能描述:闪存 16 Mbit Lo Vltg Page Erasable Seral 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M25PE16-VMP6P 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout
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