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参数资料
| 型号： | M28C64C |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Kbit 8Kb x8 Parallel EEPROM |
| 中文描述： | 64千位8KB的x8并行的EEPROM |
| 文件页数： | 3/15页 |
| 文件大小： | 114K |
| 代理商： | M28C64C |
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
– 40 to 125
°
C
T
STG
Storage TemperatureRange
– 65 to 150
°
C
V
CC
Supply Voltage
– 0.3 to 6.5
V
V
IO
Input/Output Voltage
– 0.3 to V
CC
+0.6
V
V
I
Input Voltage
– 0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2000
V
Note:
Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above
those indicated in the Operating sections of this specification is not implied. Exposure toAbsoluteMaximum Rating conditions for extended
periods may affect device reliability.Refer also tothe STMicroelectronics SURE Program and other relevant quality documents.
Table2. AbsoluteMaximumRatings
Mode
E
G
W
DQ0 - DQ7
Read
V
IL
V
IL
V
IH
Data Out
Write
V
IL
V
IH
V
IL
Data In
Standby / Write Inhibit
V
IH
X
X
Hi-Z
Write Inhibit
X
X
V
IH
Data Out or Hi-Z
Write Inhibit
X
V
IL
X
Data Out or Hi-Z
Output Disable
X
V
IH
X
Hi-Z
Note:
X = V
IH
or V
IL
Table3. OperatingModes
DataIn/Out(DQ0- DQ7).
Dataiswrittento orread
from the M28C64Cthrough the I/O pins.
WriteEnable(W).
TheWriteEnableinputcontrols
the writing of datato the M28C64C.
Ready/Busy (RB).
Ready/Busy is an open drain
output that can be used to detect the end of the
internalwrite cycle.
OPERATION
In orderto preventdata corruptionand inadvertent
write operations during power-up, a Power On
Reset(POR)circuitresetsallinternalprogramming
cicuitry. Access to the memory in write mode is
allowed after a power-upas specifiedin Table6.
Read
The M28C64C is accessed like a static RAM.
When E and G are low with W high, the data
addressed is presented on the I/O pins. The I/O
pinsarehighimpedancewheneitherGorEishigh.
Write
Write operations are initiated when both W and E
arelow andG is high.TheM28C64Csupportsboth
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurslast and the Data on the rising edge of E or
W which ever occurs first. Once initiated the write
operationis internallytimed until completion.
Page Write
Page write allows up to 32 bytes to be consecu-
tively latched into the memory prior to initiating a
programming cycle. All bytes must be located in a
single page address, that is A5 - A12 must be the
samefor all bytes.The pagewrite can beinitiated
during any bytewrite operation.
Following the first byte write instruction the host
may send another addressand dataup to a maxi-
mumof 100
μ
s aftertherisingedge of EorWwhich
ever occurs first (t
BLC
). If a transition of E or W is
not detected within 100
μ
s, the internal program-
ming cycle will start.
3/15
M28C64C, M28C64X
相关PDF资料 |
PDF描述 |
|---|---|
| M28C64X | 64 Kbit 8Kb x8 Parallel EEPROM |
| M28F102 | 1 Mbit (128Kb x8, Bulk) Flash Memory(1M位闪速存储器) |
| M28F220 | 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器) |
| M28F256 | 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位闪速存储器) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M28C64C-150K1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
| M28C64C-150K6 | 功能描述:电可擦除可编程只读存储器 DISC BY STM 3/01 PLCC-32 8KX8 150NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M28C64C-150MS1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
| M28C64C-150MS6 | 功能描述:电可擦除可编程只读存储器 DISC BY STM 3/01 SO-28 8KX8 150NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M28C64C-150N1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
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