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参数资料
| 型号： | M28C64C |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Kbit 8Kb x8 Parallel EEPROM |
| 中文描述： | 64千位8KB的x8并行的EEPROM |
| 文件页数： | 5/15页 |
| 文件大小： | 114K |
| 代理商： | M28C64C |
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only,not 100% tested.
Table5. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
LO
Output Leakage Current
0V
≤
V
IN
≤
V
CC
10
μ
A
I
CC
(1)
Supply Current (TTLand CMOS inputs)
E = V
IL
, G = V
IL
, f = 5MHz
30
mA
I
CC1
(1)
Supply Current (Standby) TTL
E = V
IH
2
mA
I
CC2
(1)
Supply Current (Standby) CMOS
E > V
CC
–0.3V
100
μ
A
V
IL
Input Low Voltage
– 0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
Note:
1. All I/O’sopen circuit.
Table6. Read Mode DC Characteristics
(T
A
= 0 to 70
°
C or –40 to 85
°
C, V
CC
= 4.5Vto 5.5V)
Symbol
Parameter
Min
Max
Unit
t
PUR
Time Delay to Read Operation
1
μ
s
t
PUW
Time Delay to Write Operation
10
ms
Note:
1. Sampled only,not 100% tested.
Table7. PowerUp Timing
(1)
(T
A
=
0 to 70
°
C or –40 to 85
°
C, V
CC
= 4.5V to 5.5V)
Input Rise and Fall Times
≤
20ns
Input Pulse Voltages
0.4V to 2.4V
Input and Output TimingRef. Voltages
0.8V to 2.0V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Table4. AC MeasurementConditions
AI00826
2.4V
0.4V
2.0V
0.8V
Figure 5. AC TestingInput Output Waveforms
AI01129
1.3V
OUT
CL= 30pF
CLincludes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure6. AC TestingEquivalent LoadCircuit
5/15
M28C64C, M28C64X
相关PDF资料 |
PDF描述 |
|---|---|
| M28C64X | 64 Kbit 8Kb x8 Parallel EEPROM |
| M28F102 | 1 Mbit (128Kb x8, Bulk) Flash Memory(1M位闪速存储器) |
| M28F220 | 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器) |
| M28F256 | 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位闪速存储器) |
| M28F410 | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4M位(512Kx8/256K x16）闪速存储器) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28C64C-150K1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
| M28C64C-150K6 | 功能描述:电可擦除可编程只读存储器 DISC BY STM 3/01 PLCC-32 8KX8 150NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M28C64C-150MS1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
| M28C64C-150MS6 | 功能描述:电可擦除可编程只读存储器 DISC BY STM 3/01 SO-28 8KX8 150NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M28C64C-150N1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit 8Kb x8 Parallel EEPROM |
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