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参数资料
| 型号： | M28F410 |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4M位(512Kx8/256K x16）闪速存储器) |
| 中文描述： | 4兆位（512KB的x8或256Kb的x16插槽，引导块）快闪记忆体（4分位（512Kx8/256K × 16）闪速存储器） |
| 文件页数： | 7/31页 |
| 文件大小： | 207K |
| 代理商： | M28F410 |
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Mne-
monic
Instruction
Cycles
1st Cycle
2nd Cycle
Operation
Address
(1)
Data
(4)
Operation
Address
Data
RD
Read
Memory
Array
1+
Write
X
FFh
Read
(2)
Read
Address
Data
RSR
Read Status
Register
1+
Write
X
70h
Read
(2)
X
Status
Register
RSIG
Read
Electronic
Signature
3
Write
X
90h
Read
(2)
Signature
Address
(3)
Signature
EE
Erase
2
Write
X
20h
Write
Block
Address
D0h
PG
Program
2
Write
X
40h or 10h
Write
Address
Data Input
CLRS
Clear Status
Register
1
Write
X
50h
ES
Erase
Suspend
1
Write
X
B0h
ER
Erase
Resume
1
Write
X
D0h
Notes:
1. X = Don’tCare.
2. The first cycle of the RD, RSR or RSIG instruction is followed by read operations to read memory array, Status Register
or Electronic Signaturecodes. Any number of Read cycle can occur after one command cycle.
3. Signatureaddress bit A0=V
IL
will outputManufacturer code. Address bit A0=V
IH
will output Device code. Other address bitsare
ignored.
4. When word organizationis used, upper byte is don’t care forcommand input.
Table6. Instructions
Erase (EE) Instruction.
This instruction uses two
write operations. The first command written is the
Erase Set-up command 20h. The second com-
mand is the EraseConfirm commandD0h. During
Hex Code
Command
00h
Invalid/Reserved
10h
Alternative Program Set-up
20h
Erase Set-up
40h
Program Set-up
50h
Clear Status Register
70h
Read Status Register
90h
Read Electronic Signature
B0h
Erase Suspend
D0h
Erase Resume/Erase Confirm
FFh
Read Array
Table7. Commands
theinput ofthesecondcommandan addressof the
block to be erasedis given and this is latchedinto
the memory. If the second command given is not
theEraseConfirm commandthenthe statusregis-
terbitsb4 andb5 aresetandthe instructionaborts.
Read operations output the status register after
erasurehas started.
Duringtheexecutionof theerasebytheP/E.C.,the
memory acceptsonly the RSR (Read Status Reg-
ister) and ES(Erase Suspend)instructions.Status
Register bit b7 returns ’0’ while the erasure is in
progressand ’1’whenit hascompleted.Aftercom-
pletionthe StatusRegisterbit b5 returns’1’if there
has been an Erase Failure because erasure has
not been verifiedeven after the maximum number
of erase cycles have been executed. Status Reg-
isterbit b3returns’1’if V
PP
doesnotremainat V
PPH
levelwhentheerasureis attemptedand/orproced-
ing.
V
PP
must be at V
PPH
when erasing, erase should
not be attemptedwhen V
PP
< V
PPH
as the results
willbeuncertain.IfV
PP
fallsbelowV
PPH
orRPgoes
Low the erase aborts and must be repeated,after
having cleared the StatusRegister (CLRS).
7/31
M28F410
相关PDF资料 |
PDF描述 |
|---|---|
| M28F411 | 4 Mbit (512Kb x8, Boot Block) Flash Memory(4M位闪速存储器) |
| M28F420 | 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器) |
| M28LV16 | 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护) |
| M28LV17 | 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护) |
| M28W160B | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F411-90N1 | 功能描述:电可擦除可编程只读存储器 DISC BY STM 10/01 TSOP-40 512KX8 90NS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M28F420 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Megabit (x8 or x16, Block Erase) FLASH MEMORY |
| M28F512 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F512-10C1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F512-12B1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
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