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参数资料
型号： M28W800BB100ZB1
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 512K X 16 FLASH 3V PROM, 100 ns, PBGA46
封装： 6.39 X 6.37 MM, 0.75 MM PITCH, TFBGA-46
文件页数： 29/42页
文件大小： 289K
代理商： M28W800BB100ZB1
35/42
M28W800BT, M28W800BB
Table 27. Primary Algorithm-Specific Extended Query Table
Note: 1. See Table 24, offset 15h for P pointer definition.
Table 28. Security Code Area
Offset
P = 35h (1)
Data
Description
Value
(P+0)h = 35h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
(P+1)h = 36h
0052h
"R"
(P+2)h = 37h
0049h
"I"
(P+3)h = 38h
0031h
Major version number, ASCII
"1"
(P+4)h = 39h
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Ah
0006h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
Chip Erase supported
(1 = Yes, 0 = No)
bit 1
Erase Suspend supported
(1 = Yes, 0 = No)
bit 2
Program Suspend
(1 = Yes, 0 = No)
bit 3
Lock/Unlock supported
(1 = Yes, 0 = No)
bit 4
Queued Erase supported
(1 = Yes, 0 = No)
bit 31 to 5
Reserved; undefined bits are ‘0’
No
Yes
No
(P+6)h = 3Bh
0000h
(P+7)h = 3Ch
0000h
(P+8)h = 3Dh
0000h
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
0000h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
bit 0
Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1
Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2
Reserved for future use; undefined bits are ‘0’
NA
(P+B)h = 40h
0000h
(P+C)h = 41h
0030h
VDD Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
3V
(P+D)h = 42h
00C0h
VPP Supply Optimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12V
(P+E)h
0000h
Reserved
Offset
Data
Description
81h
XXXX
64 bits unique device number.
82h
XXXX
83h
XXXX
84h
XXXX
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相关代理商/技术参数
参数描述
M28W800BB90N1 功能描述:闪存 8M (512Kx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W800BB90ZB6T 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W800BT100N6T 功能描述:闪存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M28W800BT90N6 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 512KX16 90NS 48TSOP - Trays
M28W800CB90N1 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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