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参数资料
型号： M28W800BB100ZB1
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 512K X 16 FLASH 3V PROM, 100 ns, PBGA46
封装： 6.39 X 6.37 MM, 0.75 MM PITCH, TFBGA-46
文件页数： 4/42页
文件大小： 289K
代理商： M28W800BB100ZB1
M28W800BT, M28W800BB
12/42
commands will be ignored. Typical Program times
are given in Table 6, Program, Erase Times and
Program/Erase Endurance Cycles.
Programming aborts if Reset goes to VIL. As data
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 16, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
ed when VPP is not at VPPH. The command can be
executed if VPP is below VPPH but the result is not
guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
s
The first bus cycle sets up the Double Word
Program command.
s
The second bus cycle latches the Address and
the Dataof the first wordtobe written.
s
The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to VIL. As data integrity
cannot be guaranteed when the program opera-
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 17, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using
the
Double
Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
Program/Erase Suspend Command
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program command will also be accepted. Only
the blocks not being erased may be read or pro-
grammed correctly.
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to VIH. Program/Erase is aborted if
Reset turns to VIL.
See Appendix C, Figure 18, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
20, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 18, Program or Double
Word Program Suspend & Resume Flowchart and
Pseudo Code, and Figure 20, Erase Suspend &
Resume Flowchart and Pseudo Code for flow-
charts for using the Program/Erase Resume com-
mand.
Block Protection
Two parameter/lockable blocks (blocks #0 and #1)
can be protected against Program or Erase oper-
ations. Unprotected blocks can be programmed or
erased.
To protect the two lockable blocks set Write Pro-
tect to VIL. When VPP is below VPPLK all blocks are
protected. Any attempt to Program or Erase pro-
tected blocks will abort, the data in the block will
not be changed and the Status Register outputs
the error.
Table 5, Memory Blocks Protection Truth Table,
defines the protection methods.
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相关代理商/技术参数
参数描述
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M28W800BB90ZB6T 功能描述:闪存 8M (512Kx16) 90ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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