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参数资料
| 型号： | M306N5FCTGP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| 封装： | 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件页数： | 6/63页 |
| 文件大小： | 825K |
| 代理商： | M306N5FCTGP |
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Electrical characteristics (Vcc = 3V)
Mitsubishi microcomputers
M16C / 62M (80-pin version) Group
(Low voltage version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
11
VOH
VOL
V
XOUT
2.5
V
0.5
V
XOUT
0.5
2.5
IOH=–1mA
IOH=–0.1mA
IOH=–50
A
IOL=1mA
IOL=0.1mA
IOL=50
A
P00 to P07, P20 to P27, P30 to P37,
P40 to P43, P50 to P57, P60 to P67,
P76, P77, P80 to P84, P86, P87,
HIGHPOWER
LOWPOWER
P90, P92 to P97, P100 to P107
HIGHPOWER
LOWPOWER
P70, P71, P76, P77, P80 to P84, P86,
P87, P90, P92 to P97, P100 to P107
HIGHPOWER
LOWPOWER
XCOUT
With no load applied
3.0
1.6
V
Symbol
Parameter
Standard
Typ.
Max.
Unit
Min.
Measuring condition
HIGH output
voltage
HIGH output
voltage
HIGH output
voltage
LOW output
voltage
LOW output
voltage
IIH
I IL
VRAM
VT+-VT-
0.20.8V
0.21.8V
P00 to P07, P20 to P27, P30 to P37,
4.0
A
RESET
XIN, RESET, CNVss (BYTE)
TA0IN, TA3IN, TA4IN,
TB0IN, TB2IN to TB5IN, INT0 to INT2,
VI=3V
VI=0V
–4.0
P00 to P07, P20 to P27, P30 to P37,
XIN, RESET, CNVss (BYTE)
RfXIN
RfXCIN
XIN
XCIN
10.0
3.0
M
M
P90, P92 to P97, P100 to P107,
P70, P71, P76, P77, P80 to P87,
P40 to P43, P50 to P57, P60 to P67,
P90, P92 to P97, P100 to P107,
P70, P71, P76, P77, P80 to P87,
P40 to P43, P50 to P57, P60 to P67,
CLK4, TA3OUT, TA4OUT, NMI, KI0 to KI3,
Icc
ADTRG,CTS0,CTS1 CLK0,CLK1,CLK3,
2.0
V
When clock is stopped
Hysteresis
HIGH input
current
LOW input
current
Feedback resistance
RAM retention voltage
Power supply current
The output pins
are open and
other pins are
VSS
SIN4, RXD0 to RXD2
Note 1: Specify a product of -40
°C to 85°C to use it.
Note 2: With one timer operated using fC32.
Square wave
f(XCIN)=32kHz
45.0
A
Square wave, no division
f(XIN)=10MHz
mA
9.5
21.25
Mask ROM version
Square wave, no division
f(XIN)=10MHz
mA
12.0
21.25
Flash memory 3V
version
Mask ROM version
Flash memory 3V
version
Square wave, division by 2
f(XIN)=10MHz
mA
Flash memory 3V
version
Program
1.0
A
20.0
0.9
A
2.8
A
f(XCIN)=32kHz
Ta=85
°C
when clock is stopped
Ta=25
°C
when clock is stopped
When a WAIT instruction
is executed.
Oscillation capacity High
(Note2)
When a WAIT instruction
is executed.
Oscillation capacity Low
(Note2)
Square wave, division by 2
f(XIN)=10MHz
17.0
mA
Flash memory 3V
version
Erase
14.0
P00 to P07, P20 to P27, P30 to P37,
P40 to P43, P50 to P57, P60 to P67,
P76, P77, P80 to P84, P86,P87,
P90, P92 to P97, P100 to P107
K
20
75
300
VI=0V
RPULLUP
Pull-up
resistance
Mask ROM version
Flash memory 3V
version
V
XCOUT
With no load applied
HIGHPOWER
LOWPOWER
LOW output
voltage
0
VCC = 3V
Table 1.20.7. Electrical characteristics (referenced to VCC = 2.7V to 3.6V, VSS = 0V at Ta = – 20oC
to 85oC / – 40oC to 85oC(Note 1), f(XIN) = 10MHz without wait unless otherwise
specified)
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相关代理商/技术参数 |
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