参数资料
型号: M39208-15WNB1
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 256K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
封装: 8 X 14 MM, PLASTIC, TSOP-32
文件页数: 4/30页
文件大小: 218K
代理商: M39208-15WNB1
EF
EE
G
W
A0
A1
A6
A9
A12
A16
A17
DQ0 - DQ7
VIL
VIH
VID
VIL
XXX
VID
X
SA
Protection Activation
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VID
XSA
SA
Verify the protection status:
when DQ0= 1, the sector is
protected
Notes:
X = Don’t care.
SA = Software Address.
Table 8. Flash Sector Protection
EF
EE
G
W
A0
A1
A6
A9
A12
A15
A16
A17
DQ0 - DQ7
VID
VIH
VID
VIL
XX
X
VID
VIH
XX
Activation of Unprotected
Mode
VIL
VIH
VIL
VIH
VIL
VIH
VID
X
SA
Verify the protection status:
when 00h, the sector is
unprotected
Notes:
X = Don’t care.
SA = Software Address.
Table 9. Flash Unprotection
Erase Suspend Instruction. When a Flash Sector
Erase operation is in progress, the Erase Suspend
instruction may suspend the operation by writing
B0h at any address (see Table 4). This allows
reading of data from another Flash sector while
erase is in progress. Erase suspend is accepted
only during the Flash Sector Erase instruction exe-
cution and defaults to read array mode. An Erase
Suspend instruction entered during an Erase
timeout will, in addition to suspending the erase,
terminates the timeout.
The Toggle bit DQ6 stops toggling when the
M39208 internal logic is suspended. The Toggle bit
status must be monitored at an address out of the
Flash sector being erased. Toggle bit will stop
toggling between 0.1
s and 15s after the Erase
Suspend instruction has been written. The M39208
will then automatically be set into Read Flash Block
Memory Array mode.
When erase is suspended, Reading from Flash
sectors being erased will output invalid data, a
Read from Flash sector not being erased is valid.
During an Erase Suspend, the Flash memory will
respond only to Erase Resume and Reset instruc-
tions.
A Reset instruction will definitively abort erasure
and can leave invalid data in the Flash sectors
being erased.
Erase Resume Instruction. If an Erase Suspend
instruction was previously executed, the erase op-
eration may be resumed by this instruction. The
Erase Resume instruction consists of writing 30h
at any address (see Table 4).
FLASH BLOCK SPECIFIC FEATURES
Flash Sector Protection. Each Flash sector can
be separately protected against Program or Erase.
Flash Sector Protection provides additional data
security, as it disables all program or erase opera-
tions. This mode is activated when both A9 and G
are set to VID (12V + 0.5V) and the Flash sector
address is applied on A16 and A17, as shown in
Figure 8 and Table 8.
Flash sector protection is programmed with the
help of a specific sequence of levels applied on EF,
EE, G, A0, A1, A6, A9, A16 and A17; this sequence
includes a verification of the Protection status on
DQ0 as shown in Table 8.
Any attempt to program or erase a protected Flash
sector will be ignored by the device.
Remarks:
– The Verify operation is a read with a simulated
worst case conditions. This allows a guarantee
of the retention of the Protection status
– During the application life, the Sector protection
status can be accessed with a regular Read
instruction without applying a "high voltage" VID
on A9. This instruction is detailed in Table 4.
12/30
M39208
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